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JCS730

JILIN SINO-MICROELECTRONICS

N-CHANNEL MOSFET

N R N-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson(Vgs=10V) 1.0 Ω Qg 31 nC z z ...


JILIN SINO-MICROELECTRONICS

JCS730

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Description
N R N-CHANNEL MOSFET JCS730 MAIN CHARACTERISTICS Package ID 5.5 A VDSS 400 V Rdson(Vgs=10V) 1.0 Ω Qg 31 nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS z z Crss ( 22pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 22pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS730V-O-V-N-B JCS730V JCS730R-O-R-N-B JCS730R JCS730R-O-R-N-A JCS730R JCS730S-O-S-N-B JCS730S JCS730B-O-B-N-B JCS730B JCS730C-O-C-N-B JCS730C JCS730F-O-F-N-B JCS730F Package IPAK DPAK DPAK TO-263 TO-262 TO-220C TO-220MF Halogen Free Packaging NO NO NO NO NO NO NO Tube Tube Reel Tube Tube Tube Tube Device Weight 0.35 g(typ) 0.30 g(typ) 0.30 g(typ) 1.37 g(typ) 1.71 g(typ) 2.15 g(typ) 2.20 g(typ) :201204C 1/16 R ABSOLUTE RATINGS (Tc=25℃) JCS730 Parameter Symbol JCS730V/R Value JCS730S/B/C - Drain-Source Voltage VDSS 400 Drain Current -continuous ID T=25℃ T=100℃ 5.5 3.5 ( 1) Drain Current - pulse (note 1) IDM 22 Gate-Source Voltage VGSS ±30 ( 2) Single Pulsed Avalanche Energy(note 2) EAS 330 ( 1) Avalanche Current(note 1) IAR 5.5 ( 1) Repetitive Avalanche Energy EAR (note 1) 7.3 ( 3) Peak Diode Recovery dv/dt dv/dt 5.5 (note 3) Power Dissipation PD TC=25℃ -Derate above 59 0.48 73 0.58 25℃ Operating and Storage Temperature Range TJ,TSTG -55~+150 Maximum Lead Temper...




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