JCS13N50FC

N N- CHANNEL MOSFET R JCS13N50C MAIN CHARACTERISTICS ID 13 A VDSS 500 V Rdson-max（@Vgs=10V） 0.49Ω Qg-typ 27 nC z z z UPS APPLICATIONS z High frequency switching mode power supply z Electronic ballast z UPS Package z z Crss ( 14pF) z z z dv/dt zRoHS FEATURES zLow gate charge zLow Crss (typical 14pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product ORDER MESSAGE Order codes Marking JCS13N50CC-O-C-N-B JCS13N50CC-O-CA-N-B JCS13N50FC-O-F-N-B JCS13N50CC JCS13N50CC JCS13N50FC Package TO-220C TO-220AB TO-220MF Halogen Free NO NO NO Packaging Tube Tube Tube Device Weight 2.15 g(typ) 2.20 g(typ) 2.20 g(typ) ：201511F 1/11 R ABSOLUTE RATINGS (Tc=25℃) JCS13N50C Value Parameter － Drain-Source Voltage Symbol VDSS JCS13N50CC JCS13N50FC 500 Unit V Drain Current -Continuous ID T=25℃ T=100℃ 13.0 8 13.0* 8* A A （ 1） Drain Current -Pulse （note 1） IDM 52 52* A Gate-Source Voltage VGSS ±30 V （ 2） Single Pulsed Avalanche Energy（note 2） EAS 840 mJ （ 1） Avalanche Current （note 1） IAR 13.0 A （ 1） Repetitive Avalanche Energy （note 1） EAR 4.8 mJ （ 3） Peak Diode Recovery dv/dt （note 3） dv/dt 4.5 V/ns Power Dissipation PD TC=25℃ -Derate above 25℃ 190 1.57 49 W 0.39 W/℃ Operating and Storage Temperature Range TJ，TSTG Maximum Lead Temperature TL for Soldering Purposes * *Drain current limited by maximum junction temperature -55～+150 300 ℃ ℃ ：201511F 2/11 R JCS13N50C E...