N-CHANNEL MOSFET
N R N-CHANNEL MOSFET
JCS1HN60C
MAIN CHARACTERISTICS
ID 0.5 A VDSS 600 V Rdson(@Vgs=10V) 15 Ω Qg 3.6 nC
TO-92
Pack...
Description
N R N-CHANNEL MOSFET
JCS1HN60C
MAIN CHARACTERISTICS
ID 0.5 A VDSS 600 V Rdson(@Vgs=10V) 15 Ω Qg 3.6 nC
TO-92
Package
z z
APPLICATIONS z High efficiency switch
mode power supplies z Electronic lamp ballasts
based on half bridge
z z Crss ( 2.8pF) z z z dv/dt zRoHS
FEATURES zLow gate charge zLow Crss (typical 2.8pF ) zFast switching z100% avalanche tested zImproved dv/dt capability zRoHS product
ORDER MESSAGE
Order codes
Marking
JCS1HN60TC-O-T-N-A JCS1HN60C
JCS1HN60TC-R-T-N-A JCS1HN60C
Package TO-92 TO-92
Halogen Free NO YES NO
Packaging Brede Brede
Device Weight 0.216 g(typ) 0.216 g(typ)
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ABSOLUTE RATINGS (Tc=25℃)
Parameter
Symbol
- Drain-Source Voltage
VDSS
Drain Current -continuous
ID T=25℃ T=100℃
( 1)
Drain Current - pulse
(note 1)
IDM
Gate-Source Voltage
VGSS
( 2) Single Pulsed Avalanche Energy(note 2)
EAS
( 1) Avalanche Current(note 1)
IAR
( 1) Repetitive Avalanche Energy (note 1)
EAR
( 3) Peak Diode Recovery dv/dt (note 3)
dv/dt
Power Dissipation
PD TC=25℃ -Derate
above 25℃
Operating and Storage Range
Temperature
TJ,TSTG
Maximum Lead Temperature for Soldering Purposes
TL
JCS1HN60C
Value JCS1HN60C 600
0.5 0.31 2.0
±30
20
1.0
Unit
V A A A
V
mJ
A
2.0 mJ
4.2 3.0
0.025
V/ns W
W/℃
-55~+150
℃
300 ℃
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ELECTRICAL CHARACTERISTICS
JCS1HN60C
Parameter
Symbol
Tests conditions
Min Typ Max Units
Off –Characteristics
- Drain-Source Voltage
BVDSS ID=2...
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