1N5711

® 1N 5711 SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION Metal to silicon junction diode featuring high breakdown, low turn-on voltage and ultrafast switching. Primarly intended for high level UHF/VHF detection and pulse application with broad dynamic range. Matched batches are available on request. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF Ptot Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current* Power Dissipation* Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Ta = 25 °C Ta = 25°C DO 35 (Glass) Value 70 15 430 - 65 to 200 - 65 to 200 230 Unit V mA mW °C °C THERMAL RESISTANCE Symbol Rth(j-a) Junction-ambient* Test Conditions Value 400 Unit °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol VBR VF * * Tamb = 25°C Tamb = 25°C Tamb = 25°C IR * * Tamb = 25°C Test Conditions IR = 10µA IF = 1mA IF = 15mA VR = 50V Min. 70 0.41 1 0.2 µA Typ. Max. Unit V V DYNAMIC CHARACTERISTICS Symbol C τ Tamb = 25°C Tamb = 25°C Test Conditions VR = 0V IF = 5mA f = 1MHz Krakauer Method Min. Typ. Max. 2 100 Unit pF ps * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. Matched batches available on request. Test conditions (forward voltage and/or capacitance) according to customer specification. August 1999 Ed: 1A 1/3 1N 5711 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Capacitance C versus reverse applied voltage VR (typ...