ES1H

ES1F - ES1J Fast Rectifiers ES1F - ES1J Fast Rectifiers Features For surface mount applications. Glass passivated junction. Low profile package. Easy pick and place. Built-in strain relief. Superfast recovery times for high efficiency. July 2007 SMA(DO-214AC) Color Band Denotes Cathode Absolute Maximum Ratings * Ta = 25°C unless otherwise noted Symbol Parameter Value ES1F ES1G ES1H VRRM IF(AV) IFSM Maximum Repetitive Reverse Voltage Average Rectified Forward Current Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave (JEDEC method) 300 400 500 1.0 30 TJ TSTG PD Junction Temperature Storage Temperature Range Power Dissipation 150 -55 to 150 1.47 * These ratings are limiting values above which the serviceability of any semiconductor device may by impaired. ES1J 600 Thermal Characteristics Symbol Parameter RθJA Thermal Resistance, Junction to Ambient * RθJL Thermal Resistance, Junction to Lead * * P. C. B mounted on 0.2’’ x 0.2’’( 5 x 5 mm) copper Pad Area. Value 85 35 Electrical Characteristics TC = 25°C unless otherwise noted Symbol Parameter VF Maximum Forward Voltage @ IF = 1.0 A Trr Maximum Reverse Recovery Time IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A IR Maximum Reverse Current @ rated VR TA = 25°C TA = 100°C Cj Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz Value 1.3 35 5.0 100 10.0 1.7 8.0 Units V A A °C °C W Units °C/W °C/W Units V ns uA pF ©2007 Fairchild Semiconductor Corporation ES1F - ES1J Rev. A...