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uPD46184362B

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18M-BIT DDR II SRAM 2-WORD BURST OPERATION

μPD46184182B μPD46184362B Datasheet 18M-BIT DDR II SRAM 2-WORD BURST OPERATION R10DS0114EJ0200 Rev.2.00 Nov 09, 2012 ...


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uPD46184362B

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μPD46184182B μPD46184362B Datasheet 18M-BIT DDR II SRAM 2-WORD BURST OPERATION R10DS0114EJ0200 Rev.2.00 Nov 09, 2012 Description The μPD46184182B is a 1,048,576-word by 18-bit and the μPD46184362B is a 524,288-word by 36-bit synchronous double data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46184182B and μPD46184362B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA. Features 1.8 ± 0.1 V power supply 165-pin PLASTIC BGA (13 x 15) HSTL interface PLL circuitry for wide output data valid window and future frequency scaling Pipelined double data rate operation Common data input/output bus Two-tick burst for low DDR transaction size Two input clocks (K and K#) for precise DDR timing at clock rising edges only Two output clocks (C and C#) for precise flight time and clock skew matching-clock and data delivered together to receiving device Internally self-timed write control Clock-stop capability. Normal operation is restored in 20 μs after clock is resumed. User programmable impedance output (35 to 70 Ω) Fast clock cycle time : 3.3 ns (300 MHz), 4.0 ns (250 MHz) ...




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