uPD46185094B

μPD46185084B μPD46185094B μPD46185184B μPD46185364B Datasheet 18M-BIT QDRTM II SRAM 4-WORD BURST OPERATION Description R10DS0113EJ0200 Rev.2.00 Nov 09, 2012 The μPD46185084B is a 2,097,152-word by 8-bit, the μPD46185094B is a 2,097,152-word by 9-bit, the μPD46185184B is a 1,048,576-word by 18-bit and the μPD46185364B is a 524,288-word by 36-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. The μPD46185084B, μPD46185094B, μPD46185184B and μPD46185364B integrate unique synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair (K and K#) are latched on the positive edge of K and K#. These products are suitable for application which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin PLASTIC BGA. Features 1.8 ± 0.1 V power supply 165-pin PLASTIC BGA (13 x 15) HSTL interface PLL circuitry for wide output data valid window and future frequency scaling Separate independent read and write data ports with concurrent transactions 100% bus utilization DDR READ and WRITE operation Four-tick burst for reduced address frequency Two input clocks (K and K#) for precise DDR timing at clock rising edges only Two output clocks (C and C#) for precise flight time and clock skew matching-clock and data delivered together to receiving device Internally self-timed writ...