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2DB1697 Dataheets PDF



Part Number 2DB1697
Manufacturers Diodes
Logo Diodes
Description PNP SURFACE MOUNT TRANSISTOR
Datasheet 2DB1697 Datasheet2DB1697 Datasheet (PDF)

NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type Available (2DD2661) • Totally Lead-Free & Fully RoHS compliant (Note 1) • Halogen and Antimony Free. “Green” Device (Note 2) 2DB1697 12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Mechanical Data • Case: SOT89 • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Ra.

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NEW PRODUCT Features • Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type Available (2DD2661) • Totally Lead-Free & Fully RoHS compliant (Note 1) • Halogen and Antimony Free. “Green” Device (Note 2) 2DB1697 12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR Mechanical Data • Case: SOT89 • Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish — Matte Tin annealed over Copper leadframe (Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Weight: 0.052 grams (approximate) SOT89 Top View COLLECTOR 2, 4 1 BASE 3 EMITTER Device Schematic 3E C4 2C 1B Top View Pin Out Configuration Ordering Information (Note 3) Part Number 2DB1697-13 Marking 1697 Reel size (inches) 13 Tape width (mm) 12 Quantity per reel 2500 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 3. For packaging details, go to our website at http://www.diodes.com. Marking Information YWW 1697 1697 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code (01 – 53) 2DB1697 Document number: DS31618 Rev. 3 - 2 1 of 5 www.diodes.com April 2012 © Diodes Incorporated NEW PRODUCT 2DB1697 Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Symbol VCBO VCEO VEBO ICM IC Value -15 -12 -6 -4 -2 Unit V V V A A Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Operating and Storage Temperature Range Symbol PD RθJA PD RθJA TJ, TSTG Value 0.9 139 2 62.5 -55 to +150 Unit W °C/W W °C/W °C Electrical Characteristics @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 6) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(SAT) hFE Min -15 -12 -6 ⎯ ⎯ ⎯ 270 Output Capacitance Cobo ⎯ Current Gain-Bandwidth Product fT ⎯ Notes: 4. Device mounted on FR-4 PCB with minimum recommended pad layout. 5. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%. Typ ⎯ ⎯ ⎯ ⎯ ⎯ -65 ⎯ 40 140 Max ⎯ ⎯ ⎯ -0.1 -0.1 -180 680 ⎯ ⎯ Unit V V V μA μA mV ⎯ pF MHz Conditions IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -15V, IE = 0 VEB = -6V, IC = 0 IC = -1A, IB = -50mA VCE = -2V, IC = -200mA VCB = -10V, IE = 0, f = 1MHz VCE = -2V, IC = -100mA, f = 100MHz 2DB1697 Document number: DS31618 Rev. 3 - 2 2 of 5 www.diodes.com April 2012 © Diodes Incorporated PD, POWER DISSIPATION (W) 2.0 1.6 1.2 Note 5 0.8 0.4 Note 4 0 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature 10,000 VCE = -4V -IC, COLLECTOR CURRENT (A) 2DB1697 2.0 1.8 IB = -5mA 1.6 1.4 IB = -4mA 1.2 IB = -3mA 1.0 0.8 IB = -2mA 0.6 0.4 IB = -1mA 0.2 0 01 2 3 4 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 1 IC/IB = 20 NEW PRODUCT -VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE, DC CURRENT GAIN TA = 150°C 1,000 TA = 85°C TA = 25°C TA = -55°C 0.1 0.01 TA = 150°C TA = 85°C TA = 25°C TA = -55°C 100 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current 1.2 VCE = -4V 1.0 0.001 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current 1.2 IC/IB = 20 1.0 -VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V) -VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V) 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C 0.2 TA = 150°C 0.8 TA = -55°C 0.6 TA = 25°C 0.4 TA = 85°C TA = 150°C 0.2 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage vs. Collector Current 0 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage vs. Collector Current 2DB1697 Document number: DS31618 Rev. 3 - 2 3 of 5 www.diodes.com April 2012 © Diodes Incorporated NEW PRODUCT CAPACITANCE (pF) fT, GAIN-BANDWIDTH PRODUCT (MHz) 1,000 f = 1MHz 1,000 2DB1697 100 Cibo Cobo 10 0.1 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 7 Typica.


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