Document
NEW PRODUCT
Features
• Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary NPN Type Available (2DD2661) • Totally Lead-Free & Fully RoHS compliant (Note 1) • Halogen and Antimony Free. “Green” Device (Note 2)
2DB1697
12V LOW VCE(sat) PNP SURFACE MOUNT TRANSISTOR
Mechanical Data
• Case: SOT89 • Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0 • Moisture Sensitivity: Level 1 per J-STD-020D • Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208 • Weight: 0.052 grams (approximate)
SOT89 Top View
COLLECTOR 2, 4
1 BASE
3 EMITTER Device Schematic
3E C4 2C
1B
Top View Pin Out Configuration
Ordering Information (Note 3)
Part Number 2DB1697-13
Marking 1697
Reel size (inches) 13
Tape width (mm) 12
Quantity per reel 2500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YWW 1697
1697 = Product Type Marking Code YWW = Date Code Marking Y = Last digit of year (ex: 8 = 2008) WW = Week code (01 – 53)
2DB1697
Document number: DS31618 Rev. 3 - 2
1 of 5 www.diodes.com
April 2012
© Diodes Incorporated
NEW PRODUCT
2DB1697
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current
Symbol VCBO VCEO VEBO ICM IC
Value -15 -12 -6 -4 -2
Unit V V V A A
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Power Dissipation (Note 4) Thermal Resistance, Junction to Ambient Air (Note 4) Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient Air (Note 5) Operating and Storage Temperature Range
Symbol PD RθJA PD RθJA
TJ, TSTG
Value 0.9 139 2 62.5
-55 to +150
Unit W
°C/W W
°C/W °C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 6) Emitter-Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current ON CHARACTERISTICS (Note 6) Collector-Emitter Saturation Voltage DC Current Gain SMALL SIGNAL CHARACTERISTICS
Symbol
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO
VCE(SAT) hFE
Min
-15 -12 -6 ⎯ ⎯
⎯ 270
Output Capacitance
Cobo
⎯
Current Gain-Bandwidth Product
fT ⎯
Notes:
4. Device mounted on FR-4 PCB with minimum recommended pad layout. 5. Device mounted on FR-4 PCB with 1 inch2 copper pad layout. 6. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
Typ
⎯ ⎯ ⎯ ⎯ ⎯
-65 ⎯
40
140
Max
⎯ ⎯ ⎯ -0.1 -0.1
-180 680
⎯
⎯
Unit
V V V μA μA
mV ⎯
pF
MHz
Conditions
IC = -100μA, IE = 0 IC = -10mA, IB = 0 IE = -100μA, IC = 0 VCB = -15V, IE = 0 VEB = -6V, IC = 0
IC = -1A, IB = -50mA VCE = -2V, IC = -200mA
VCB = -10V, IE = 0, f = 1MHz VCE = -2V, IC = -100mA, f = 100MHz
2DB1697
Document number: DS31618 Rev. 3 - 2
2 of 5 www.diodes.com
April 2012
© Diodes Incorporated
PD, POWER DISSIPATION (W)
2.0 1.6
1.2
Note 5
0.8
0.4 Note 4
0 0 25 50 75 100 125 150
TA, AMBIENT TEMPERATURE (°C) Fig. 1 Power Dissipation vs. Ambient Temperature
10,000
VCE = -4V
-IC, COLLECTOR CURRENT (A)
2DB1697
2.0
1.8
IB = -5mA
1.6
1.4 IB = -4mA
1.2
IB = -3mA
1.0
0.8 IB = -2mA
0.6
0.4 IB = -1mA
0.2
0 01 2 3 4 -VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
1
IC/IB = 20
NEW PRODUCT
-VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
hFE, DC CURRENT GAIN
TA = 150°C
1,000
TA = 85°C TA = 25°C
TA = -55°C
0.1 0.01
TA = 150°C TA = 85°C
TA = 25°C TA = -55°C
100 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 3 Typical DC Current Gain vs. Collector Current
1.2
VCE = -4V
1.0
0.001 1 10 100 1,000 10,000 -IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current
1.2
IC/IB = 20
1.0
-VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
-VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
0.8
TA = -55°C
0.6
TA = 25°C
0.4
TA = 85°C
0.2 TA = 150°C
0.8
TA = -55°C
0.6
TA = 25°C
0.4 TA = 85°C
TA = 150°C
0.2
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA) Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
0
1
10
100
1,000
10,000
-IC, COLLECTOR CURRENT (mA) Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
2DB1697
Document number: DS31618 Rev. 3 - 2
3 of 5 www.diodes.com
April 2012
© Diodes Incorporated
NEW PRODUCT CAPACITANCE (pF) fT, GAIN-BANDWIDTH PRODUCT (MHz)
1,000
f = 1MHz
1,000
2DB1697
100
Cibo Cobo
10 0.1
1
10 100
VR, REVERSE VOLTAGE (V)
Fig. 7 Typica.