BRIDGE RECTIFIERS. 3N259-M Datasheet

3N259-M RECTIFIERS. Datasheet pdf. Equivalent


Part 3N259-M
Description SILICON BRIDGE RECTIFIERS
Feature 3N254-M SERIES SILICON BRIDGE RECTIFIERS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENT.
Manufacture Central Semiconductor
Datasheet
Download 3N259-M Datasheet


3N254-M SERIES SILICON BRIDGE RECTIFIERS w w w. c e n t r a 3N259-M Datasheet
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3N259-M
3N254-M SERIES
SILICON BRIDGE RECTIFIERS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 3N254-M series
types are silicon single phase, full wave bridge rectifiers
designed for general purpose applications.
MARKING: FULL PART NUMBER
CASE B-M
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
3N
SYMBOL 254-M
Peak Repetitive Reverse Voltage
VRRM 100
DC Blocking Voltage
VR 100
RMS Reverse Voltage
VR(RMS) 70
Average Forward Current (TA=55°C)
IO
Peak Forward Surge Current
IFSM
Operating and Storage
Junction Temperature
TJ, Tstg
3N
255-M
200
200
140
3N 3N
256-M 257-M
400 600
400 600
280 420
2.0
55
-65 to +150
3N
258-M
800
800
560
3N
259-M UNITS
1000 V
1000 V
700 V
A
A
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN MAX
IR VR=Rated VRRM
10
VF IF=3.14A
1.1
UNITS
μA
V
R3 (25-February 2013)



3N259-M
3N254-M SERIES
SILICON BRIDGE RECTIFIERS
CASE B-M - MECHANICAL OUTLINE
MARKING:
FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R3 (25-February 2013)







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