BC846AS

BC846AS NPN GENERAL PURPOSE TRANSISTORS VOLTAGE 65 Volts CURRENT 150 mWatts FEATURES General purpose amplifier applications NPN epitaxial silicon, planar design Collector current IC = 100mA In compliance with EU RoHS 2002/95/EC directives MECHANICAL DATA Case : SOT-363, Plastic Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.006 gram Marking : 46A ABSOLUTE RATINGS PARAMETER Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC THERMAL CHARACTERISTICS PARAMETER Max Power Dissipation (Note 1) Thermal Resistance , Junction to Ambient Junction Temperature Storage Temperature Symbol PTOT RθJA TJ TSTG Note 1: Transistor mounted on FR-4 board 70 x 60 x 1mm. STAD-JUN.20.2007 Value 65 80 6.0 100 Units V V V mA Value 150 833 -55 to 150 -55 to 150 Units mW OC/W OC OC PAGE . 1 BC846AS ELECTRICAL CHARACTERISTICS PARAMETER S ym b o l Te s t C o nd i ti o n C ollector - Emi tter Breakdown Voltage V(BR)C EO IC =10mA, IB=0 Collector - Base Breakdown Voltage V (BR)C B O IC =10uA , IE =0 Emitter - Base Breakdown Voltage V (BR)E B O IE =1uA , IC =0 Collector-Base Cutoff Current DC Current Gain ICBO V C B =30V, IE =0 hFE IC =10uA , V C E =5V DC Current Gain Collector - Emitter Saturation Voltage Base - Emitter Saturation Voltage Base - Emitter Voltage Collector - Base Capacitance hFE IC =2.0mA , V C E =5V V CE(SAT) V BE(SAT) V BE(ON) IC =10mA, IB=0.5mA IC =...