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BC847BLP4 Dataheets PDF



Part Number BC847BLP4
Manufacturers Diodes
Logo Diodes
Description NPN SMALL SIGNAL TRANSISTOR
Datasheet BC847BLP4 DatasheetBC847BLP4 Datasheet (PDF)

Features  BVCEO > 45V  IC = 100mA High Collector Current  PD = 1000mW Power Dissipation  0.60mm2 Package Footprint, 13 times Smaller than SOT23  0.4mm Height Package Minimizing Off-Board Profile  Complementary NPN Type BC857BLP4  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability BC847BLP4 45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Mechanical Data  Case: X2-DFN1006-3  Case Ma.

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Features  BVCEO > 45V  IC = 100mA High Collector Current  PD = 1000mW Power Dissipation  0.60mm2 Package Footprint, 13 times Smaller than SOT23  0.4mm Height Package Minimizing Off-Board Profile  Complementary NPN Type BC857BLP4  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. "Green" Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability BC847BLP4 45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006 Mechanical Data  Case: X2-DFN1006-3  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish  NiPdAu. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.0008 grams (Approximate) X2-DFN1006-3 Bottom View C B E Device Symbol B C E Top View Device Schematic Ordering Information (Note 4) Product BC847BLP4-7 BC847BLP4-7B Marking F1 F1 Reel size (inches) 7 7 Tape width (mm) 8mm 8mm Quantity per reel 3,000 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information BC847BLP4-7 F1 Top View Dot Denotes Collector Side From date code 1527 (YYWW), this changes to: F1 Top View Bar Denotes Base and Emitter Side F1 F1 F1 F1 F1 F1 F1 F1 F1 BC847BLP4-7B F1 Top View Bar Denotes Base and Emitter Side F1 = Product Type Marking Code BC847BLP4 Document number: DS31297 Rev. 7 - 2 1 of 5 www.diodes.com May 2015 © Diodes Incorporated Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Collector Current Symbol VCBO VCEO VEBO IC ICM BC847BLP4 Value 50 45 6.0 100 200 Unit V V V mA mA Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Thermal Resistance, Junction to Ambient (Note 5) (Note 6) (Note 5) (Note 6) Thermal Resistance, Junction to Lead (Note 7) Operating and Storage and Temperature Range Symbol PD RJA RJL TJ, TSTG ESD Ratings (Note 8) Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model Symbol ESD HBM ESD MM Value 400 1000 310 120 120 -55 to +150 Unit mW C/W °C/W °C Value 4,000 200 Unit V V JEDEC Class 3A B Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage (Note 9) Base-Emitter Saturation Voltage (Note 9) Base-Emitter Voltage (Note 9) Collector-Cutoff Current Gain Bandwidth Product Collector-Base Capacitance Symbol Min Typ Max Unit Test Condition BVCBO 50 — — BVCEO 45 — — BVEBO 6 —— hFE 200 350 450 V IC = 10µA, IB = 0 V IC = 10mA, IB = 0 V IE = 1µA, IC = 0 — VCE = 5.0V, IC = 2.0mA VCE(sat) — 80 200 250 600 mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VBE(sat) — — 700 900 — — mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA VBE(on) 580 — 640 725 700 770 mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA ICBO — — — — 15 nA VCB = 30V 5.0 µA VCB = 30V, TA = +150°C fT 100 — — MHz VCE = 5.0V, IC = 10mA, f = 100MHz CCBO — 3.0 — pF VCB = 10V, f = 1.0MHz Notes: 5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%. BC847BLP4 Document number: DS31297 Rev. 7 - 2 2 of 5 www.diodes.com May 2015 © Diodes Incorporated IC, COLLECTOR CURRENT (mA) Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.) 100 600 IB = 0.5mA 80 IB = 0.4mA IB = 0.3mA 400 60 IB = 0.2mA hFE, DC CURRENT GAIN 40 IB = 0.1mA 200 20 BC847BLP4 VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0 01 2 3 4 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage 5 0.3 IC/IB = 20 0.2 TA = 150ºC 0.1 TA = 85ºC TA = 25ºC TA = -55ºC 0 0.1 1 10 100 IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage vs. Collector Current.


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