Document
Features
BVCEO > 45V IC = 100mA High Collector Current PD = 1000mW Power Dissipation 0.60mm2 Package Footprint, 13 times Smaller than SOT23 0.4mm Height Package Minimizing Off-Board Profile Complementary NPN Type BC857BLP4 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. "Green" Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
BC847BLP4
45V NPN SMALL SIGNAL TRANSISTOR IN DFN1006
Mechanical Data
Case: X2-DFN1006-3 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu.
Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0008 grams (Approximate)
X2-DFN1006-3 Bottom View
C
B
E
Device Symbol
B C
E
Top View Device Schematic
Ordering Information (Note 4)
Product BC847BLP4-7 BC847BLP4-7B
Marking F1 F1
Reel size (inches) 7 7
Tape width (mm) 8mm 8mm
Quantity per reel 3,000 10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
BC847BLP4-7
F1
Top View Dot Denotes Collector Side
From date code 1527 (YYWW), this changes to:
F1
Top View Bar Denotes Base and Emitter Side
F1 F1 F1
F1 F1 F1
F1 F1 F1
BC847BLP4-7B
F1
Top View Bar Denotes Base and Emitter Side
F1 = Product Type Marking Code
BC847BLP4
Document number: DS31297 Rev. 7 - 2
1 of 5 www.diodes.com
May 2015
© Diodes Incorporated
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Pulse Collector Current
Symbol VCBO VCEO VEBO IC ICM
BC847BLP4
Value 50 45 6.0 100 200
Unit V V V mA mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation Thermal Resistance, Junction to Ambient
(Note 5) (Note 6) (Note 5) (Note 6)
Thermal Resistance, Junction to Lead
(Note 7)
Operating and Storage and Temperature Range
Symbol PD
RJA RJL TJ, TSTG
ESD Ratings (Note 8)
Characteristic Electrostatic Discharge - Human Body Model Electrostatic Discharge - Machine Model
Symbol ESD HBM ESD MM
Value 400 1000 310 120 120
-55 to +150
Unit mW
C/W °C/W
°C
Value 4,000 200
Unit V V
JEDEC Class 3A B
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage (Note 9) Emitter-Base Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage (Note 9)
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Voltage (Note 9)
Collector-Cutoff Current
Gain Bandwidth Product Collector-Base Capacitance
Symbol Min Typ Max Unit Test Condition
BVCBO
50
—
—
BVCEO
45
—
—
BVEBO
6
——
hFE 200 350 450
V IC = 10µA, IB = 0
V IC = 10mA, IB = 0
V IE = 1µA, IC = 0 — VCE = 5.0V, IC = 2.0mA
VCE(sat)
—
80 200
250 600
mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA
VBE(sat)
— —
700 900
— —
mV IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5.0mA
VBE(on)
580 —
640 725
700 770
mV VCE = 5.0V, IC = 2.0mA VCE = 5.0V, IC = 10mA
ICBO
— —
— —
15 nA VCB = 30V 5.0 µA VCB = 30V, TA = +150°C
fT
100 —
—
MHz
VCE = 5.0V, IC = 10mA, f = 100MHz
CCBO — 3.0 — pF VCB = 10V, f = 1.0MHz
Notes:
5. For the device mounted on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady state condition. The entire exposed collector pad is attached to the heatsink. 6. Same as Note 5, except the exposed collector pad is mounted on 25mm x 25mm 2oz copper. 7. Thermal resistance from junction to solder-point (on the exposed collector pad). 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 9. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
BC847BLP4
Document number: DS31297 Rev. 7 - 2
2 of 5 www.diodes.com
May 2015
© Diodes Incorporated
IC, COLLECTOR CURRENT (mA)
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
100 600
IB = 0.5mA
80 IB = 0.4mA
IB = 0.3mA
400
60
IB = 0.2mA
hFE, DC CURRENT GAIN
40
IB = 0.1mA
200
20
BC847BLP4
VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V)
0 01 2 3 4
VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
5
0.3
IC/IB = 20
0.2
TA = 150ºC
0.1 TA = 85ºC
TA = 25ºC TA = -55ºC
0 0.1 1
10 100
IC, COLLECTOR CURRENT (mA) Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current.