DMN2013UFX

DMN2013UFX Dual N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 11.5mΩ @ VGS = 4.5V 14mΩ @ VGS = 2.5V ID max TA = +25°C 10 A 9A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  ESD Protected  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)   Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: W-DFN5020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections: See Diagram Below  Weight: 0.03 grams (approximate) G1 S1 S1 W-DFN5020-6 D1/D2 ESD PROTECTED Top View Bottom View G2 S2 S2 Top View Pin-Out Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN2013UFX-7 Case W-DFN5020-6 Packaging 3000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.htmlfor more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and L...