DMN2014LHAB

ADVANCE INFORMATION DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V ID TA = +25°C 9.0A 8.7A 8.0A 6.7A 6.3A Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Power Management Functions Battery Pack Load Switch Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Case: U-DFN2030-6 Case Material: Molded Plastic, “Green” Molding Compound UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.012 grams (approximate) U-DFN2030-6 D1 D2 G1 G2 ESD PROTECTED TO 2kV Bottom View Top View Gate Protection Diode S1 Gate Protection Diode S2 Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN2014LHAB-7 DMN2014LHAB-13 Case U-DFN2030-6 U-DFN2030-6 Packaging 3,000 / Tape & Reel 10,000 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2....