Document
NAEDWVAPNRCOED IUNCFTORMATION
DMN2029USD
20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(on) max
25m @ VGS = 4.5V 35m @ VGS = 2.5V
Package SO-8
ID TA = +25°C
5.8A
4.8A
Description
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Applications
DC-DC Converters Power Management Functions Backlighting
Features
Low Input Capacitance Low On-Resistance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SO-8 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate)
SO-8 Top View
S1 D1
G1 D1
S2 D2 G1 G2 D2
Top View Pin Configuration
D1 D2
G2 S1 S2
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMN2029USD-13
Case SO-8
Packaging 2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
Top View 85
N2029SD YY WW
14
Logo Part n.o Xth week: 01 ~ 53 Year: “12” = 2012
DMN2029USD
Document number: DS36127 Rev. 3 - 2
1 of 6 www.diodes.com
May 2013
© Diodes Incorporated
DMN2029USD
NAEDWVAPNRCOED IUNCFTORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Continuous Drain Current (Note 6) VGS = 4.5V
Maximum Body Diode Forward Current (Note 6) Pulsed Drain Current (10s pulse, duty cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH
Steady State
t < 10s
TA = +25°C TA = +70°C
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
ID
IS IDM IAS EAS
Value 20 ±8
5.8 4.7
6.9 5.7
2.1 30 15 11.2
Units V V
A
A
A A A mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Total Power Dissipation (Note 5)
Characteristic
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
TA = +25°C
TA = +70°C Steady state
t < 10s
TA = +25°C
TA = +70°C St.