DMN2041UFDB

DMN2041UFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device BVDSS N-Channel 20V RDS(ON) MAX 40mΩ @ VGS = 4.5V 65mΩ @ VGS = 2.5V ID MAX TA = +25°C 4.7A 3.7A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features  Low On-Resistance  Low Input Capacitance  Low Profile, 0.6mm Max Height  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. https://www.diodes.com/quality/product-definitions/ Applications  Load Switch  Power Management Functions  Portable Power Adaptors Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4  Terminal Connections: See Diagram Below  Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type B) D1 D2 ESD PROTECTED D2 D2 G1 S1 Pin1 S2 G2 D1 D1 Bottom View G1 G2 Gate Protection Diode S1 Gate Protection Diode S2 Q1 N-CHANNEL Q2 N-CHANNEL Intern...