DMN2400UFD

NEW PRODUCT Product Summary BVDSS 20V RDS(ON) MAX 0.6Ω @ VGS = 4.5V 0.8Ω @ VGS = 2.5V 1.0Ω @ VGS = 1.8V 1.6Ω @ VGS = 1.5V NOT RECOMMENDED FOR NEW DESIGN USE DMN2450UFD DMN2400UFD N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits ID MAX TA = +25°C 0.9A 0.7A 0.5A 0.3A  Low On-Resistance  Very low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description and Applications This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Power Management Functions  Battery Operated Systems and Solid-State Relays  Load Switch Mechanical Data  Case: X1-DFN1212-3  Case Material: Molded Plastic; UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper Leadframe; Solderable per MIL-STD-202, Method 208 e4  Terminal Connections: See Diagram  Weight: 0.005 grams (Approximate) Drain Gate Body Diode ESD PROTECTED Top View Bottom View Gate Protection Diode Source Equivalent Circuit Pin-out Top View Ordering Information (Note 4) Notes: Part Number Case Packaging DMN2400UFD-7 X1-DFN1212-3 3,000/Tape & Reel 1. No purposely added ...