DMN2990UDJ

NEW PRODUCT DMN2990UDJ DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) Max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID Max TA = 25°C 450mA 400mA 330mA 300mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions  DC-DC Converters  Analog Switch SOT963 Features  Dual N-Channel MOSFET  Low On-Resistance  Very Low Gate Threshold Voltage, 1.0V Max  Low Input Capacitance  Fast Switching Speed  Ultra-Small Surface Mount Package 1mm x 1mm  Low Package Profile, 0.45mm Maximum Package Height  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  An Automotive-Compliant Part is Available Under Separate Datasheet (DMN2990UDJQ) Mechanical Data  Case: SOT963  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.027 grams (Approximate) D1 G2 S2 ESD PROTECTED Top View S1 G1 D2 Top View Schematic and Tran...