DMN2990UFA

NEW PRODUCT DMN2990UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID max TA = +25°C 510mA 470mA 380mA 330mA Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions  Analog Switch Features and Benefits  Low Package Profile, 0.4mm Maximum Package height  0.48mm2 package footprint, 16 times smaller than SOT23  Low On-Resistance  Very low Gate Threshold Voltage, 1.0V max  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 standards for High Reliability Mechanical Data  Case: X2-DFN0806-3  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4  Weight: 0.001 grams (approximate) Drain ESD PROTECTED Bottom View S D G Top View Package Pin Configuration Gate Body Diode Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN2990UFA-7B Case X2-DFN0806-3 Packaging 10K/Tape & Reel 1. No purposely added...