DMN2990UFZ

A D VNA EN CWEPDRNIOENDFWUOPCRRTMOADTUI COTN DMN2990UFZ 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) max 0.99Ω @ VGS = 4.5V 1.2Ω @ VGS = 2.5V 1.8Ω @ VGS = 1.8V 2.4Ω @ VGS = 1.5V ID max TA = +25°C 250mA 230mA 180mA 150mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications General Purpose Interfacing Switch Power Management Functions Analog Switch Features and Benefits Low Package Profile, 0.42mm Maximum Package Height 0.62mm x 0.62mm Package Footprint Low On-Resistance Very Low Gate Threshold Voltage, 1.0V Max ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Mechanical Data Case: X2-DFN0606-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) X2-DFN0606-3 ESD PROTECTED Bottom View Equivalent Circuit Top View Package Pin Configuration Ordering Information (Note 4) Notes: Part Number DMN2990UFZ-7B Case X2-DFN0606-3 Packaging 10K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoH...