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DMN3008SFG Dataheets PDF



Part Number DMN3008SFG
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMN3008SFG DatasheetDMN3008SFG Datasheet (PDF)

ADVANCE INFORMATION DMN3008SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 30V RDS(ON) Max 4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID Max TC = +25°C 62A 56A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits  Low RDS(ON) – Ensures On-State Losses are Minimized  Small, Form Factor Thermally Effi.

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ADVANCE INFORMATION DMN3008SFG 30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8 Product Summary BVDSS 30V RDS(ON) Max 4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V ID Max TC = +25°C 62A 56A Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Features and Benefits  Low RDS(ON) – Ensures On-State Losses are Minimized  Small, Form Factor Thermally Efficient Package Enables Higher Density End Products  Occupies only 33% of the Board Area Occupied by SO-8 Enabling Smaller End Products  100% Unclamped Inductive Switch (UIS) Test in Production  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Applications  Backlighting  Power Management Functions  DC-DC Converters Mechanical Data  Case: PowerDI®3333-8  Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminal Connections Indicator: See Diagram  Terminals: Finish  Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Weight: 0.072 grams (Approximate) PowerDI3333-8 S Pin 1 S S G D D D D Bottom View Top View D G S Equivalent Circuit Ordering Information (Note 4) Notes: Part Number DMN3008SFG-7 DMN3008SFG-13 Case PowerDI3333-8 PowerDI3333-8 Packaging 2,000/Tape & Reel 3,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information PowerDI3333-8 N08 PowerDI is a registered trademark of Diodes Incorporated. DMN3008SFG Document number: DS36748 Rev. 7 - 2 YYW W N08= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53) 1 of 7 www.diodes.com June 2018 © Diodes Incorporated ADVANCE INFORMATION Maximum Ratings (@TA = +25°C, unless otherwise specified.) Drain-Source Voltage Gate-Source Voltage Characteristic Steady State Continuous Drain Current (Note 6) VGS = 10V t<10s Steady State Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH TA = +25°C TA = +70°C TA = +25°C TA = +70°C TC = +25°C TC = +70°C Symbol VDSS VGSS ID ID ID IDM IS IAS EAS DMN3008SFG Value Unit 30 V ±20 V 17.6 14.1 A 23.0 18.4 A 62 50 A 150 A 2 A 45 A 101 mJ Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range TA = +25°C TA = +70°C Steady State t < 10s TA = +25°C TA = +70°C Steady State t < 10s Symbol PD RθJA PD RθJA RθJC TJ, TSTG Value 0.9 0.6 134 79 2.1 1.3 58 34 4.8 -55 to +150 Unit W °C/W °C/W W °C/W °C/W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR QRR Min 30 — — 1 — — — — — — — — — — — — — — — — — Typ — — — — 3.9 4.6 0.75 3,690 530 459 0.9 41 86 9.2 18.6 5.7 14.0 63.7 28.4 19.3 10.7 Max — 10 ±100 2.3 4.4 5.5 1.2 — — — — — — — — — — — — — — Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subje.


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