Document
ADVANCE INFORMATION
DMN3008SFG
30V N-CHANNEL ENHANCEMENT MODE MOSFET PowerDI3333-8
Product Summary
BVDSS 30V
RDS(ON) Max
4.4mΩ @ VGS = 10V 5.5mΩ @ VGS = 4.5V
ID Max TC = +25°C
62A 56A
Description
This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications.
Features and Benefits
Low RDS(ON) – Ensures On-State Losses are Minimized Small, Form Factor Thermally Efficient Package Enables Higher
Density End Products Occupies only 33% of the Board Area Occupied by SO-8 Enabling
Smaller End Products 100% Unclamped Inductive Switch (UIS) Test in Production Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Applications
Backlighting Power Management Functions DC-DC Converters
Mechanical Data
Case: PowerDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate)
PowerDI3333-8
S Pin 1 S S G
D D D D
Bottom View
Top View
D
G S
Equivalent Circuit
Ordering Information (Note 4)
Notes:
Part Number DMN3008SFG-7 DMN3008SFG-13
Case PowerDI3333-8 PowerDI3333-8
Packaging 2,000/Tape & Reel 3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
PowerDI3333-8
N08
PowerDI is a registered trademark of Diodes Incorporated.
DMN3008SFG
Document number: DS36748 Rev. 7 - 2
YYW W
N08= Product Type Marking Code YYWW = Date Code Marking YY = Last Two Digits of Year (ex: 18 = 2018) WW = Week Code (01 to 53)
1 of 7 www.diodes.com
June 2018
© Diodes Incorporated
ADVANCE INFORMATION
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Drain-Source Voltage Gate-Source Voltage
Characteristic
Steady State
Continuous Drain Current (Note 6) VGS = 10V
t<10s
Steady State Pulsed Drain Current (10μs Pulse, Duty Cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current, L = 0.1mH Avalanche Energy, L = 0.1mH
TA = +25°C TA = +70°C TA = +25°C TA = +70°C TC = +25°C TC = +70°C
Symbol VDSS VGSS
ID
ID
ID IDM IS IAS EAS
DMN3008SFG
Value
Unit
30
V
±20
V
17.6 14.1
A
23.0 18.4
A
62 50
A
150
A
2
A
45
A
101
mJ
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
TA = +25°C TA = +70°C Steady State
t < 10s
TA = +25°C TA = +70°C Steady State
t < 10s
Symbol PD
RθJA
PD
RθJA RθJC TJ, TSTG
Value 0.9 0.6 134 79 2.1 1.3 58 34 4.8
-55 to +150
Unit
W
°C/W °C/W
W
°C/W °C/W °C/W
°C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge
Symbol
BVDSS IDSS IGSS
VGS(TH)
RDS(ON)
VSD
Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON)
tR tD(OFF)
tF tRR QRR
Min
30 — —
1 — — —
— — — — — — — — — — — — — —
Typ
— — —
— 3.9 4.6 0.75
3,690 530 459 0.9 41 86 9.2 18.6 5.7 14.0 63.7 28.4 19.3 10.7
Max
— 10 ±100
2.3 4.4 5.5 1.2
— — — — — — — — — — — — — —
Notes:
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subje.