G35160

® WON-TOP ELECTRONICS Features  Glass Passivated Die Construction  Low Leakage  Low Forward Voltage  High Surge Current Capability  Die Size 160mil SQ G35160 35A HIGH VOLTAGE GLASS PASSIVATED CELL DIODE Pb Anode + C D Mechanical Data  Case: Cell Diode Passivated with Silicon Rubber  Terminal: Copper Disc with Ag Plated  Polarity: Indicated by Large Disc On Cathode Side  Mounting Position: Any  Lead Free: For RoHS / Lead Free Version, Add “-LF” Suffix to Part Number, See Page 2 B A C35M Dim Min Max A — 6.40 B — 5.46 C 0.75 — D — 2.50 All Dimensions in mm Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TC = 125°C Non-Repetitive Peak Forward Surge Current 8.3ms Single Half Sine-Wave Superimposed on Rated Load (JEDEC Method) Forward Voltage @IF = 35A Peak Reverse Current At Rated DC Blocking Voltage @TA = 25°C Typical Thermal Resistance Junction to Ambient Operating and Storage Temperature Range Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM R JA TJ, TSTG Value 1600 1120 35 400 1.2 5.0 1.4 -40 to +150 Unit V V A A V µA °C/W °C © Won-Top Electronics Co., Ltd. Revision: April, 2012 www.wontop.com 1 G35160 ® WON-TOP ELECTRONICS ORDERING INFORMATION Product No. G35160 ...