650V N-Channel Super Junction MOSFET
HCD65R360S_HCU65R360S
June 2015
HCD65R360S / HCU65R360S
650V N-Channel Super Junction MOSFET
FEATURES
Originative Ne...
Description
HCD65R360S_HCU65R360S
June 2015
HCD65R360S / HCU65R360S
650V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S#9GS=10V 100% Avalanche Tested
BVDSS = 650 V
RDS(on) typ ȍ
ID = 11 A
D-PAK I-PAK
2
1 1
32 3
HCD65R360S HCU65R360S 1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM VGS EAS IAR EAR dv/dt
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
650 11 7 33 ρ20 300 3.0 0.6 15
Power Dissipation (TA = 25)*
PD Power Dissipation (TC = 25) - Derate above 25
2.5 100 0.8
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
Units V A A A V mJ A mJ
V/ns W W
W/
Thermal Resistance Characteristics
Symbol
Parameter
RșJC RșJA
Junction-to-Case Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ. ----
Max. 1.5 50 110
Units /W
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