HCP70R600S

HCP70R600S HCP70R600S 650V N-Channel Super Junction MOSFET FEATURES ‰ Originative New Design ‰ Superior Avalanche Rugged Technology ‰ Robust Gate Oxide Technology ‰ Very Low Intrinsic Capacitances ‰ Excellent Switching Characteristics ‰ Unrivalled Gate Charge : 16 nC (Typ.) ‰ Extended Safe Operating Area ‰ Lower RDS(ON) ȍ7\S#9GS=10V ‰ 100% Avalanche Tested November 2014 BVDSS = 700 V RDS(on) typ ȍ ID = 7.3 A TO-220 1 23 1.Gate 2. Drain 3. Source Absolute Maximum Ratings TC=25୅ unless otherwise specified Symbol Parameter Value VDSS ID IDM VGS Drain-Source Voltage Drain Current Drain Current Drain Current – Continuous (TC = 25୅) – Continuous (TC = 100୅) – Pulsed (Note 1) Gate-Source Voltage Static AC (f>1 Hz) 700 7.3 4.6 22 ρ20 ρ30 EAS IAR EAR dv/dt Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt (Note 2) (Note 1) (Note 1) 120 2.0 0.5 15 PD Power Dissipation (TC = 25୅) - Derate above 25୅ 100 0.8 TJ, TSTG TL Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds -55 to +150 300 Units V A A A V V mJ A mJ V/ns W W ୅ ୅ Thermal Resistance Characteristics Symbol RșJC RșJA Parameter Junction-to-Case Junction-to-Ambient Typ. --- Max. 1.2 60.5 Units ୅/W క͑΄Ͷ;ͺ͹΀Έ͑΃Ͷ·͟Ͳ͑͢͝ͿΠΧΖΞΓΖΣ͑͑ͣͥ͑͢͡ HCP70R600S Electrical Characteristics TJ=25 qC unless otherwise specified Symbol Parameter Test Conditions Min Typ Max Units O...