Document
HCS65R360S
HCS65R360S
650V N-Channel Super Junction MOSFET
FEATURES
Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 23 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) ȍ7\S #9GS=10V 100% Avalanche Tested
November 2014
BVDSS = 650 V RDS(on) typ = 0.32 ȍ ID = 11 A
TO-220F
12 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS ID IDM VGS
Drain-Source Voltage
Drain Current Drain Current Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Static AC (f>1 Hz)
650 11 * 7* 33 * ρ20 ρ30
EAS IAR EAR dv/dt
Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt
(Note 2) (Note 1) (Note 1)
300 3.0 0.6 15
PD
Power Dissipation (TC = 25) - Derate above 25
31 0.25
TJ, TSTG TL
Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds
-55 to +150 300
* Drain current limited by maximum junction temperature
Thermal Resistance Characteristics
Symbol RșJC RșJA
Parameter Junction-to-Case Junction-to-Ambient
Typ. ---
Max. 4.0 60.5
Units V A A A V V mJ A mJ
V/ns W W
Units
/W
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HCS65R360S
Electrical Characteristics TJ=25 qC unless otherwise specified
Symbol
Parameter
Test Conditions
Min Typ Max Units
On Characteristics
VGS Gate Threshold Voltage Static Drain-Source
RDS(ON) On-Resistance
VDS = VGS, ID = 250 Ꮃ VGS = 10 V, ID = 5.5 A
2.8 --
Off Characteristics
BVDSS IDSS IGSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current
VGS = 0 V, ID = 250 Ꮃ VDS = 650 V, VGS = 0 V VDS = 520 V, TJ = 125 VGS = ρ20 V, VDS = 0 V
650 ----
Dynamic Characteristics
Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance
Switching Characteristics
VDS = 25 V, VGS = 0 V, f = 1.0 MHz
VGS = 0 V, VDS = 0 V, f = 1MHz
-----
td(on) Turn-On Time tr Turn-On Rise Time
td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge
Qgs Gate-Source Charge Qgd Gate-Drain Charge
VDS = 325 V, ID = 11 A, RG = 25
VDS = 520 V, ID = 11 A VGS = 10 V
--------
Source-Drain Diode Maximum Ratings and Characteristics
IS Continuous Source-Drain Diode Forward Current
ISM Pulsed Source-Drain Diode Forward Current
VSD Source-Drain Diode Forward Voltage IS = 11 A, VGS = 0 V
trr Reverse Recovery Time Qrr Reverse Recovery Charge
IS = 5.5 A, VGS = 0 V diF/dt = 100 A/ȝV
------
-- 4.2
0.32 0.36
-- --- 10 -- 100 -- ρ100
920 -400 --
8 -0.5 --
30 -30 -85 -25 -23 -6 -7 --
-- 11 -- 33 -- 1.2 350 -5 --
V
V Ꮃ Ꮃ Ꮂ
Ꮔ Ꮔ Ꮔ
Ꭸ Ꭸ Ꭸ Ꭸ nC nC nC
A
V Ꭸ ȝ&
Notes ; 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. IAS=3.5A, VDD=50V, RG=25:, Starting TJ =25qC
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HCS65R360S
Typical Characteristics
ID, Drain Current [A]
DS(ON)R [:], Drain-Source On-Resistance
VGS Top : 15.0 V
10.0 V 8.0 V 7.0 V 6.0 V 101 5.5 V 5.0 V Bottom : 4.5 V
* Notes :
100
1. 300us Pulse Test 2. TC = 25oC
100 101
VDS, Drain-Source Voltage [V]
Figure 1. On Region Characteristics
1.0
0.8 0.6 VGS = 10V
0.4
VGS = 20V 0.2
Note : TJ = 25oC 0.0
0 4 8 12 16 20 24
I , Drain Current [A]
D
Figure 3. On Resistance Variation vs Drain Current and Gate Voltage
6000 5000
Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd
4000 Coss
3000
2000 1000
0 10-1
* Note ; 1. VGS = 0 V
Ciss 2. f = 1 MHz
Crss
100 101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
VGS, Gate-Source Voltage [V]
IDR, Reverse Drain Current [A]
ID, Drain Current [A]
10
25oC 150oC
-25oC
* Notes : 1. VDS= 30V 2. 300us Pulse Test
0.1
2 V4GS, Gate-Sour6ce Voltage [V]8 10
Figure 2. Transfer Characteristics
10
1 150oC 25oC
0.1 0.0
* Notes : 1. VGS= 0V 2. 300us Pulse Test
0.2 0.4 0.6 0.8
VSD, Source-Drain Voltage [V]
1.0
1.2
Figure 4. Body Diode Forward Voltage Variation with Source Current and Temperature
12
VDS = 130V 10 VDS = 325V
VDS = 520V
8
6
4
2
Note : ID = 11A 0
0 5 10 15 20 25
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
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Capacitances [pF]
HCS65R360S
Typical Characteristics (continued)
BVDSS, (Normalized) Drain-Source Breakdown Voltage
ID, Drain Current [A]
1.2
1.1
1.0
0.9 0.8
-100
Note : 1. VGS = 0 V 2. ID = 250PA
-50 0 50 100 150
T , Junction Temperature [oC] J
200
Figure 7. Breakdown Voltage Variation vs Temperature
102 Operation in This Area is Limited by R
DS(on)
10 Ps
101 100 Ps 1 ms
10 ms
100 ms 100 DC
10-1 10-2
10-1
* Notes : 1. TC = 25 oC 2. TJ = 150 oC 3. Single Pulse
100 101
102
103
VDS, Drain-Source Voltage [V]
Figure 9. Maximum Safe Operating Area
RDS(ON), (Normalized) Drain-Source On-Resistance
ID, Dr.