RoHS 2SD1781K
SOT-23-3L
2SD1781K TRANSISTOR (NPN)
DFEATURES Power dissipation
TPCM: .,LCollector current
200 mW (Ta...
RoHS 2SD1781K
SOT-23-3L
2SD1781K
TRANSISTOR (
NPN)
DFEATURES Power dissipation
TPCM: .,LCollector current
200 mW (Tamb=25℃)
1. 9
0. 95¡ À0. 025
1. 02
0. 35 2. 92¡ À0. 05
ICM℃
0.8 A
OCollector-base voltage
V(BR)CBO:
40 V
COperating and storage junction temperature range
TJ Tstg: -55℃ to +150℃
1. BASE 2. EMITTER 3. COLLECTOR
2. 80¡ À0. 05 1. 60¡ À0. 05
ICELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
NParameter
Collector-base breakdown voltage
OCollector-emitter breakdown voltage REmitter-base breakdown voltage TCollector cut-off current
Emitter cut-off current
CDC current gain ECollector-emitter saturation voltage LTransition frequency ECollector output capacitance
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE(1) VCE(sat)
fT
Cob
Test conditions
Ic=50µA, IE=0 Ic=1mA, IB=0 IE=50µA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 VCE=3V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz
MIN TYP MAX UNIT
40 V 32 V 5V
0.5 µA 0.5 µA 120 390 0.4 V 150 MHz 10 pF
JCLASSIFICATION OF hFE(1) ERank WRange
Q 120-270
R 180-390
Marking
AFQ
AFR
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
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