2SD999

2SD999 TRANSISTOR (NPN) FEATURES z Low Collector-Emitter Saturation Voltage z Mini Power Type Package z Excellent DC Current Gain Linearity SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 25 5 1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage V(BR)CEO Emitter-base breakdown voltage V(BR)EBO Collector cut-off current ICBO Emitter cut-off current IEBO DC current gain hFE(1)* hFE(2)* Collector-emitter saturation voltage VCE(sat)* Base-emitter saturation voltage VBE(sat)* Base -emitter voltage VBE* Transition frequency fT Collector output capacitance Cob *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE（1） Test conditions IC=100µA,IE=0 IC=1mA,IB=0 IE=100µA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=1V, IC=100mA VCE=1V, IC=1A IC=1A,IB=0.1A IC=1A,IB=0.1A VCE=6V, IC=10mA VCE=6V,IC=10mA VCB=6V, IE=0, f=1MHz RANK RANGE MARKING CM 90–180 CM CL 135–270 CL Min Typ 30 25 5 90 50 0.6 130 22 Max 0.1 0.1 400 0.4 1.2 0.7 CK 200–400 CK Unit V V V µA µA V V V MHz pF JinYu semiconductor ww...