A92

  A92 NPN Silicon Epitaxial Planar Transistor FEATURES z Collector-Emitter voltage:VCEO=300V. z Collector current up to 500mA. z Complement to A92. z Small flat package. z Power dissipation:Pd(max)=500mW. Pb Lead-free  APPLICATIONS z High voltage transistor. ORDERING INFORMATION Type No. Marking A42 A42 SOT-89 Package Code SOT-89 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter VCBO collector-base voltage VCEO collector-emitter voltage VEBO emitter-base voltage IC collector current (DC) PC Tj ,Tstg Collector dissipation junction and storage temperature Value 310 305 5 0.5 0.5 -55-150 UNIT V V V A W °C  WEJ ELECTRONIC CO./7' Http:// www.wej.cn E-mail:wej@yonge rjia.com A42 ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Symbol Parameter Test conditions MIN. MAX. V(BR)CBO Collector-base breakdown voltage IC=100μA,IE=0 310 - UNIT V V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Collector-emitter breakdown voltage Emitter-base breakdown voltage collector cut-off current emitter cut-off current DC current gain Collector-emitter saturation voltage IC=1.0mA,IB=0 IE=100μA,IC=0 IE = 0,VCB = 200V IC = 0,VEB = 5V VCE =10V; IC=1mA VCE =10V;IC =10mA VCE =10V;IC =30mA IC =20mA; IB =2mA 305 - V 5 -V - 0.25 μA - 0.1 μA 60 100 300 75 - - 0.2 V VBE(sat) Base-emitter saturation voltage IC =20mA; IB=2mA - 0.9 V fT Transition frequency VCE=20V,IC=10mA,f=30MHz 50 MHz TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwi...