RoHS BA282/BA283
Band switching diode TDFeatures
1. Low differential forward resistance
.,L2. Low diode capacitance
3. High reverse impedance
Applications
OBand switching in VHF-tuners
CConstruction ICSilicon epitaxial planar
NAbsolute Maximum Ratings
Tj=25
OParameter
Reverse voltage
RForward current TJunction temperature
Storage temperature range
Test Conditions
ECMaximum Thermal Resistance
Tj=25
LParameter WEJ EJunction ambient
Test Conditions I=4mm, TL=constant
Symbol VR IF Tj Tstg
Value 35 100 150
-55…+150
Unit V mA
Symbol RthJA
Value 350
Unit K/W
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
RoHS BA282/BA283
Electrical Characteristics
Tj=25 Parameter
Test Conditions
Type Symbol Min Typ Max Unit
DForward voltage TReverse current .,LDiode capacitance
IF=100mA VR=20V f=100MHZ, VR=1V f=100MHZ, VR=3V
Differential forward
Oresistance
f=200MHZ, IF=3mA f=200MHZ,IF=10mA
CReverse impedance f=100MHZ,VR=1V
BA282 BA283 BA282 BA283 BA282 BA283
VF IR CD CD CD rf rf rf rf zr
100
1V 50 nA 1.5 pF 1.25 pF 1.2 pF 0.7 1.2 0.5 0.9
K
ICDimensions in mm
RONCathode T2.0 max.
Cathode identification
0.55 max. Anode
EC26 min. ELStandard Glass Case WEJJEDEC DO 35
4.2 max.
26 min.
WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:
[email protected]
.