RoHS BC847S
Multi-Chip TRANSISTOR (NPN)
SOT-363
FEATURES Power dissipation
DPCM : 300 mW (Tamb=25℃)
TCollector curr...
RoHS BC847S
Multi-Chip
TRANSISTOR (
NPN)
SOT-363
FEATURES Power dissipation
DPCM : 300 mW (Tamb=25℃)
TCollector current
.,LICM : 200 mA
Collector-base voltage
V(BR)CBO : 50
V
Operating and storage junction temperature range
OTJ,Tstg: -55℃to +150℃ CMARKING: 1C
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
ICParameter NCollector-base breakdown voltage
Collector-emitter breakdown voltage
OEmitter-base breakdown voltage RCollector cut-off current TDC current gain CCollector-emitter saturation voltage LEBase-emitter voltage ETransition frequency WEJCollector output capacitance
Symbol Test conditions
V(BR)CBO Ic=10µA,IE=0 V(BR)CEO Ic=10mA,IB=0 V(BR)EBO IE=10µA,IC=0
ICBO VCB=30V,IE=0 hFE(1) VCE=5V,IC=2mA VCE(sat)(1) IC=10mA,IB=0.5mA VCE(sat)(2) IC=100mA,IB=5mA VBE(1) VCE=5V,IC=2mA VBE(2) VCE=5V,IC=10mA
fT VCE=5V,IC=20mA ,f=100MHz Cob VCB=10V,IE=0,f=1MHz
MIN TYP MAX UNIT
50 V
45 V
6V
15 nA
110 630
0.25 V
0.65 V
0.58
0.7 V
0.77 V
200 MHz
2 pF
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:
[email protected]
Typical Characteristics
RoHS BC847S
WEJ ELECTRONIC CO.,LTD
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:
[email protected]
RoHS BC847S
WEJ ELECTRONIC CO.,LTD
WEJ ELECTRONIC CO.,LTD Http:// www.wej.cn E-mail:
[email protected]
...