KC847S

SMD Type Transistors NPN Multi-Chip General Purpose Amplifier KC847S(BC847S) Features High current gain Low collector-emitter saturation voltage SOT-363 1.3+0.1 -0.1 0.65 Unit: mm 0.525 +0.11.25 -0.1 +0.152.3 -0.15 0.36 0.3+0.1 -0.1 2.1+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Device Dissipation Derate above 25 Thermal Resistance, Junction to Ambient Operating and Storage Junction Temperature Range Symbol VCBO VCEO VEBO IC PD R JA TJ, Tstg Rating 50 45 6.0 100 300 2.4 415 -55 to +150 Unit V V V mA mW mW/ /W +0.050.95 -0.05 0.1max 0.1+0.05 -0.02 1 E1 2 B1 3 C2 4 E2 5 B2 6 C1 Electrical Characteristics Ta = 25 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Output Capacitance Transistion frequency Symbol Testconditons VCBO IC = 10 A, IE = 0 VCEO IC = 10 mA, IB = 0 VEBO IE = 10 A, IC = 0 ICBO VCB = 30 V, IE = 0 VCB = 30 V, IE = 0, TA = 150 hFE IC = 2.0 mA, VCE = 5.0 V IC = 10 mA, IB = 0.5 mA VCE(sat) IC = 100 mA, IB = 5.0 mA IC = 2.0 mA, VCE = 5.0 V VBE(on) IC = 10 mA, VCE = 5.0 V Cob VCB = 10 V, f = 1.0 MHz fT IC = 20 mA, VCE = 5.0,f = 100 mHz Min Typ Max Unit 50 V 45 V 6.0 V 15 nA 5.0 A 110 630 0.25 V 0.65 V 0.58 0.7 V 0.77 V 2.0 pF 200 MHz Marking Marking 1C www.kexin.com.cn 1...