Multi-chip transistor (NPN)
APPLICATION This device is designed for general purpose amplifier applications
Marking :1C
...
Multi-chip
transistor (
NPN)
APPLICATION This device is designed for general purpose amplifier applications
Marking :1C
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Parameter
Value
VCBO
Collector-Base Voltage
50
VCEO
Collector-Emitter Voltage
45
VEBO
Emitter-Base Voltage
6
IC Collector Current-Continuous
200
PD Power Dissipation
200
RθJA Thermal Resistance. Junction to Ambient
625
Tj Junction Temperature
150
Tstg Storage Temperature Range
-55~+150
Units
V
mA mW ℃/W ℃
BC847S
SOT-363
C1 B2 E2
E1 B1 C2
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter
Symbol Test conditions
Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current
V(BR)CBO V(BR)CEO
IC=10µA,IE=0 IC=1mA,IB=0
V(BR)EBO IE=10µA,IC=0
ICBO VCB=30V,IE=0
Emitter cut-off current
IEBO
VEB =4V , IC=0
DC current gain*
hFE VCE=5V,IC=2mA
Collector-emitter saturation voltage
VCE(sat)(1) IC=10mA,IB=0.5mA VCE(sat)(2) IC=100mA,IB=5mA
Base-emitter voltage
VBE(1) VBE(2)
VCE=5V,IC=2mA VCE=5V,IC=10mA
Transition frequency
fT VCE=5V,IC=20mA ,f=100MHz
Collector output capacitance
Cob
*pulse test: Pulse Width ≤300μs, Duty Cycle≤ 2.0%.
VCB=10V,IE=0,f=1MHz
Min Typ Max Unit 50 V 45 V 6V
15 nA
15
110 630
0.25 V
0.65 V
0.58 0.7 V
0.77 V
200 MHz
2 pF
1
JinYu
semiconductor
www.htsemi.com
Date:2011/ 05
BC847S
Typical Characteristics
COLLECTOR CURRENT I (mA) C
I —— V
C CE 50
COMMON EMITTER Ta...
