BCW31

RoHS BCW31 FEATURES * Low current(100mA) * Low voltage(32V) * General purpose swithching and amplification DABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit TCollector-Base Voltage Vcbo 32 V .,LCollector-Emitter Voltage Vceo 32 V Emitter-Base Voltage Veb 5 V Collector Current Ic 100 mA Collector Dissipation Ta=25 * PD 250 mW OJunction Temperature Tj 150 2.9 1.9 0.95 0.95 0.4 Storage Temperature Tstg -65-150 CELECTRICAL CHARACTERISTICS at Ta=25 Characteristic Symbol Min Typ Max Collector-Base Breakdown Voltage BVcbo 32 ICCollector-Emitter Breakdown BVceo 32 Voltage# NEmitter-Base Breakdown Voltage BVebo 5 OCollector Cutoff Current Icbo 100 10 Emitter Cutoff Current Iebo 100 RBase-Emitter Voltage Vbe 550 700 Collector Capacitance Cob 2.5 TDC Current Gain 190 Hfe 110 220 ECCollector-Emitter Saturation Voltage Vce(sat) 120 250 210 LBase-Emitter Saturation Voltage Vbe(sat) 750 850 ETransition Frequency fT 100 Noise figure 10 F J* Total Device Dissipation : FR=1X0.75X0.062in Board,Derate 25 . E# Pulse Test : Pulse Width 300uS,Duty cycle 2% DEVICE MARKING: W BCW31=D1t 1. 2.4 1.3 1 . G AT E 2 .SO U RC E R 3.DRAIE U nit :m m Unit Test Conditions V Ic=100uA Ie=0 V Ic= 2mA Ib=0 V Ie= 100uA Ic=0 nA Vcb= 32V Ie=0 uA Vcb=32V Ie=0 Tj=100 nA Veb=5V Ic=0 mV Ic=2mA Vce=5V pF Ie=0 Vcb=10V f=1MHz Vce= 5V Ic= 10uA Vce= 5V Ic= 2mA Ic= 10mA Ib= 0.5mA mV Ic=50mA Ib=2.5mA Ic= 10mA Ib= 0.5mA mV Ic=50mA Ib=2.5mA Vce=5V Ic=10mA M...