BCW61B

RoHS BCW61B SOT-23 Plastic-Encapsulate Transistors BCW61B DFEATURES TRANSISTOR (PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR TPower dissipation 1. 0 .,LPCM: 0.25 W (Tamb=25℃) Collector current OICM: -0.2 Collector-base voltage A 2. 9 1. 9 0. 95 0. 4 CV(BR)CBO: -32 V 0. 95 Operating and storage junction temperature range ICTJ, Tstg: -55℃ to +150℃ 2. 4 1. 3 Unit: mm ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) NParameter OCollector-base breakdown voltage RCollector-emitter breakdown voltage TEmitter-base breakdown voltage Collector cut-off current CCollector cut-off current EDC current gain LCollector-emitter saturation voltage EBase-emitter saturation voltage JTransition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Test conditions Ic= -10µA, IE=0 Ic= -1mA, IB=0 IE=-10µA, IC=0 VCB=-32V, IE=0 VEB=-4V, IC=0 VCE=-5V, IC= -2mA IC=-50mA, IB=-1.25mA IC=-50mA, IB=-1.25mA VCE= -5V, IC=-10mA f=100MHz MIN -32 -32 -5 180 100 TYP MAX UNIT V V V -0.02 µA -0.02 µA 310 -0.55 -1.05 V V MHz WEMarking BB WEJ ELECTRONIC CO. Http:// www.wej.cn E-mail:wej@yongerjia.com ...