BCX53

SMD Type Transistors PNP Medium Power Transistors BCX51,BCX52,BCX53 Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage BCX51 BCX52 BCX53 Collector-emitter voltage BCX51 BCX52 BCX53 Emitter-base voltage Collector current Peak collector current Peak base current Total power dissipation Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient Thermal resistance from junction to solder point Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Ramb Rth(j-a) Rth(j-s) Rating -45 -60 -100 -45 -60 -80 -5 -1 -1.5 -200 1.3 -65 to +150 150 -65 to +150 94 14 Unit V V V V V V V A A mA W K/W K/W www.kexin.com.cn 1 SMD Type Transistors BCX51,BCX52,BCX53 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain BCX51-10,BCX52-10,BCX53-10 BCX51-16,BCX52-16,BCX53-16 Collector-emitter saturation voltage Base to emitter voltage Transition frequency Symbol Testconditons ICBO VCB = -30 V, IE = 0 VCB = -30 V, IE = 0; Tj = 125 IEBO VEB = -5 V, IC = 0 hFE IC = -5 mA; VCE = -2 V IC = -150 mA; VCE = -2 V IC = -500 mA; VCE = -2 V hFE IC = -150 mA; VCE = -2 V IC = -150 mA; VCE = -2 V VCE(sat) IC = -500 mA; IB = -50 mA VBE IC = -500 mA; VCE = -2 V fT IC = -10 mA; VCE = -5 V; f = 100 MHz Min 63 63 40 63 100 Typ Max -100 -10 -100 250 160 250 -500 -1 50 Unit nA ìA nA mV V MH...