2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance RDS = 60 mΩ typ.
High speed switching 4 V gate drive device can be driven from 5 V source
REJ03G1091-0400 Rev.4.00
May 15, 2006
Outline
RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L))
4
RENESAS Package code: PRSS0004AE-B (Package name:...
