Silicon N Channel MOS FET
H5N5007P
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance • Low leakage current • High...
Description
H5N5007P
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance Low leakage current High speed switching Low gate charge
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D
1 2 3
G S
REJ03G1116-0400 (Previous: ADE-208-1404B)
Rev.4.00 Sep 07, 2005
1. Gate 2. Drain (Flange) 3. Source
Rev.4.00 Sep 07, 2005 page 1 of 6
H5N5007P
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C 3. Tch ≤ 150°C
Symbol
VDSS VGSS
ID ID (pulse) Note 1
IDR IAP Note 3 Pch Note 2 θ ch-c
Tch
Tstg
Value 500 ±30 25 100 25
7 150 0.833 150 –55 to +150
(Ta = 25°C) Unit
V V A A A A W °C/W °C °C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V ...
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