H5N6001P

H5N6001P Silicon N Channel MOS FET High Speed Power Switching Features Low on-resistance Low leakage current High speed switching Low gate charge (Qg) Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1 2 3 G S REJ03G1118-0300 (Previous: ADE-208-1425A) Rev.3.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.3.00 Sep 07, 2005 page 1 of 6 H5N6001P Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR IDR (pulse) Note 1 IAP Note 3 Pch Note 2 θ ch-c Tch Tstg Value 600 ±30 20 80 20 80 6.5 150 0.833 150 –55 to +150 (Ta = 25°C) Unit V V A A A A A W °C/W °C °C Electrical Characteristics Item Drain to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Forward transfer admittance Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate to source charge Gate to drain charge Body-drain diode forward voltage Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note...