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H7N0307AB Dataheets PDF



Part Number H7N0307AB
Manufacturers Renesas
Logo Renesas
Description Silicon N-Channel MOSFET
Datasheet H7N0307AB DatasheetH7N0307AB Datasheet (PDF)

H7N0307AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1120-0300 (Previous: ADE-208-1568A) Rev.3.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.3.00 Sep 07, 2005 page 1 of 6 H7N0307AB Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Dra.

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H7N0307AB Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS (on) = 4.6 mΩ typ. • Low drive current • 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) 123 G D S REJ03G1120-0300 (Previous: ADE-208-1568A) Rev.3.00 Sep 07, 2005 1. Gate 2. Drain (Flange) 3. Source Rev.3.00 Sep 07, 2005 page 1 of 6 H7N0307AB Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 3. Pulse test Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 θ ch-c Tch Tstg Value 30 ±20 60 240 60 90 1.39 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C/W °C °C Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (off) RDS (on) |yfs| Ciss Coss Crss Qg Qgs Qgd td (on) tr td (off) tf VDF trr (Ta = 25°C) Min Typ Max Unit Test Conditions 30 — — V ID = 10 mA, VGS = 0 ±20 — — V IG = ±100 µA, VDS = 0 — — ±10 µA VGS = ±16 V, VDS = 0 — — 10 µA VDS = 30 V, VGS = 0 1.0 — 2.5 V ID = 1 mA, VDS = 10 V Note 3 — 4.6 5.8 mΩ ID = 30 A, VGS = 10 V Note 3 — 8.0 11.5 mΩ ID = 30 A, VGS = 4.5 V Note 3 40 65 — S ID = 30 A, VDS = 10 V Note 3 — 2500 — pF VDS = 10 V — 650 — pF VGS = 0 — 350 — pF f = 1 MHz — 40 — nC VDD = 10 V — 7 — nC VGS = 10 V — 8 — nC ID = 60 A — 20 — — 300 — — 70 — ns VGS = 10 V, ID = 30 A ns RL = 0.33 Ω ns Rg = 4.7 Ω — 20 — ns — 0.92 — — 60 — V IF = 60 A, VGS = 0 ns IF = 60 A, VGS = 0 diF/dt = 50 A/µs Rev.3.00 Sep 07, 2005 page 2 of 6 Channel Dissipation Pch (W) H7N0307AB Main Characteristics Power vs. Temperature Derating 160 120 80 40 0 0 50 100 150 200 Case Temperature Tc (°C) Drain Current ID (A) Typical Output Characteristics 50 10 V 40 4.5 V 3.5 V Pulse Test 30 20 3V 10 VGS = 2.5 V 0 0 2 4 6 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 0.20 Pulse Test 0.16 0.12 0.08 ID = 10 A 0.04 5A 2A 0 0 4 8 12 16 20 Gate to Source Voltage VGS (V) Drain to Source Voltage VDS(on) (V) Rev.3.00 Sep 07, 2005 page 3 of 6 Drain to Source On State Resistance RDS(on) (mΩ) Drain Current ID (A) Drain Current ID (A) Maximum Safe Operation Area 500 100 10 DC 1 ms OperationPW = 10 100 ms 10 µs µs 1 Operation in this area is limited by RDS(on) 0.1 Tc = 25°C 1 shot Pulse 0.01 0.1 0.3 1 3 10 30 100 Drain to Source Voltage VDS (V) Typical Transfer Characteristics 50 VDS = 10 V Pulse Test 40 30 25°C 20 Tc = 75°C –25°C 10 0 012345 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 100 Pulse Test 50 20 VGS = 4.5 V 10 5 10 V 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current ID (A) H7N0307AB Static Drain to Source on State Resistance RDS(on) (mΩ) Static Drain to Source on State Resistance vs. Temperature 20 Pulse Test 16 ID = 2 A, 5 A, 10 A 12 VGS = 4.5 V 8 4 10 V 2 A, 5 A, 10 A 0 –40 0 40 80 120 160 Case Temperature Tc (°C) Reverse Recovery Time trr (ns) 1000 500 Body-Drain Diode Reverse Recovery Time 200 100 50 20 di / dt = 50 A / µs VGS = 0, Ta = 25°C 10 0.1 0.3 1 3 10 30 100 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics 50 ID = 60 A 40 VGS 20 16 30 VDS 20 VDD = 25 V 10 V 12 5V 8 10 VDD = 25 V 4 10 V 5V 00 0 20 40 60 80 100 Gate Charge Qg (nc) Gate to Source Voltage VGS (V) Switching Time t (ns) Capacitance C (pF) Forward Transfer Admittance |yfs| (S) Forward Transfer Admittance vs. Drain Current 100 Tc = –25°C 30 10 75°C 25°C 3 1 0.3 VDS = 10 V Pulse Test 0.1 0.1 0.3 1 3 10 30 100 Drain Current ID (A) 10000 3000 1000 300 100 Typical Capacitance vs. Drain to Source Voltage Ciss Coss Crss 30 VGS = 0 f = 1 MHz 10 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Switching Characteristics 500 200 100 td(off) tr 50 td(on) 20 tf 10 VGS = 10 V, VDS = 10 V Rg = 4.7 Ω, duty ≤ 1 % 5 0.1 0.2 0.5 1 2 5 10 20 50 100 Drain Current ID (A) Rev.3.00 Sep 07, 2005 page 4 of 6 H7N0307AB Normalized Transient Thermal Impedance γ s (t) Reverse Drain Current IDR (A) Reverse Drain Current vs. Source to Drain Voltage 100 80 10 V VGS = 0 60 5V 40 20 Pulse Test 0 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0..


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