Document
H7N0307AB
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS (on) = 4.6 mΩ typ.
• Low drive current • 4.5 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB)
123
G
D S
REJ03G1120-0300 (Previous: ADE-208-1568A)
Rev.3.00 Sep 07, 2005
1. Gate 2. Drain (Flange) 3. Source
Rev.3.00 Sep 07, 2005 page 1 of 6
H7N0307AB
Absolute Maximum Ratings
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Electrical Characteristics
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time
Note: 3. Pulse test
Symbol VDSS VGSS ID
ID (pulse) Note 1 IDR
Pch Note 2 θ ch-c Tch Tstg
Value 30 ±20 60 240 60 90 1.39 150
–55 to +150
(Ta = 25°C) Unit
V V A A A W °C/W °C °C
Symbol V (BR) DSS V (BR) GSS
IGSS IDSS VGS (off) RDS (on)
|yfs| Ciss Coss Crss Qg Qgs Qgd td (on)
tr td (off)
tf VDF trr
(Ta = 25°C)
Min Typ Max Unit
Test Conditions
30 — —
V ID = 10 mA, VGS = 0
±20 —
—
V IG = ±100 µA, VDS = 0
— — ±10 µA VGS = ±16 V, VDS = 0
— — 10 µA VDS = 30 V, VGS = 0
1.0 — 2.5 V ID = 1 mA, VDS = 10 V Note 3
— 4.6 5.8 mΩ ID = 30 A, VGS = 10 V Note 3
— 8.0 11.5 mΩ ID = 30 A, VGS = 4.5 V Note 3
40 65 —
S ID = 30 A, VDS = 10 V Note 3
— 2500 —
pF VDS = 10 V
— 650 —
pF VGS = 0
— 350 —
pF f = 1 MHz
— 40 — nC VDD = 10 V — 7 — nC VGS = 10 V — 8 — nC ID = 60 A
— 20 — — 300 — — 70 —
ns VGS = 10 V, ID = 30 A ns RL = 0.33 Ω ns Rg = 4.7 Ω
— 20 — ns
— 0.92 — — 60 —
V IF = 60 A, VGS = 0 ns IF = 60 A, VGS = 0
diF/dt = 50 A/µs
Rev.3.00 Sep 07, 2005 page 2 of 6
Channel Dissipation Pch (W)
H7N0307AB
Main Characteristics
Power vs. Temperature Derating 160
120
80
40
0 0 50 100 150 200 Case Temperature Tc (°C)
Drain Current ID (A)
Typical Output Characteristics
50 10 V
40 4.5 V
3.5 V Pulse Test
30
20 3V
10 VGS = 2.5 V
0 0 2 4 6 8 10
Drain to Source Voltage VDS (V)
Drain to Source Saturation Voltage vs. Gate to Source Voltage
0.20 Pulse Test
0.16
0.12
0.08
ID = 10 A 0.04
5A 2A 0 0 4 8 12 16 20
Gate to Source Voltage VGS (V)
Drain to Source Voltage VDS(on) (V)
Rev.3.00 Sep 07, 2005 page 3 of 6
Drain to Source On State Resistance RDS(on) (mΩ)
Drain Current ID (A)
Drain Current ID (A)
Maximum Safe Operation Area
500
100 10
DC
1 ms OperationPW = 10
100 ms
10 µs
µs
1 Operation in this area is
limited by RDS(on)
0.1
Tc = 25°C
1 shot Pulse 0.01
0.1 0.3 1 3 10 30
100
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics 50
VDS = 10 V Pulse Test 40
30
25°C 20
Tc = 75°C –25°C
10
0 012345 Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance vs. Drain Current
100 Pulse Test
50
20 VGS = 4.5 V
10
5 10 V
2
1 0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
H7N0307AB
Static Drain to Source on State Resistance RDS(on) (mΩ)
Static Drain to Source on State Resistance vs. Temperature
20 Pulse Test
16
ID = 2 A, 5 A, 10 A 12
VGS = 4.5 V 8
4 10 V
2 A, 5 A, 10 A
0 –40 0
40 80 120 160
Case Temperature Tc (°C)
Reverse Recovery Time trr (ns)
1000 500
Body-Drain Diode Reverse Recovery Time
200 100
50
20 di / dt = 50 A / µs VGS = 0, Ta = 25°C
10 0.1 0.3 1 3 10 30 100
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
50 ID = 60 A
40
VGS
20 16
30 VDS
20
VDD = 25 V 10 V 12 5V
8
10
VDD = 25 V
4
10 V
5V 00
0 20 40 60 80 100
Gate Charge Qg (nc)
Gate to Source Voltage VGS (V) Switching Time t (ns)
Capacitance C (pF)
Forward Transfer Admittance |yfs| (S)
Forward Transfer Admittance vs. Drain Current
100
Tc = –25°C 30
10 75°C
25°C 3
1
0.3 VDS = 10 V Pulse Test
0.1 0.1 0.3 1 3 10 30 100
Drain Current ID (A)
10000 3000 1000 300 100
Typical Capacitance vs. Drain to Source Voltage
Ciss
Coss Crss
30 VGS = 0 f = 1 MHz
10 0 10 20 30 40 50
Drain to Source Voltage VDS (V)
Switching Characteristics 500
200 100 td(off)
tr
50
td(on) 20
tf 10 VGS = 10 V, VDS = 10 V
Rg = 4.7 Ω, duty ≤ 1 % 5 0.1 0.2 0.5 1 2 5 10 20 50 100
Drain Current ID (A)
Rev.3.00 Sep 07, 2005 page 4 of 6
H7N0307AB
Normalized Transient Thermal Impedance γ s (t) Reverse Drain Current IDR (A)
Reverse Drain Current vs. Source to Drain Voltage
100
80
10 V
VGS = 0
60
5V
40
20
Pulse Test 0
0 0.4 0.8 1.2 1.6 2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance vs. Pulse Width
3 Tc = 25°C
1 D=1
0.5 0..