H7N0307LS

H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching REJ03G1121-0700 (Previous: ADE-208-1516E) Rev.7.00 Apr 07, 2006 Features Low on-resistance RDS (on) = 4.6 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) 4 123 H7N0307LD RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 1. Gate 2. Drain 3. Source 4. Drain H7N0307LS RENESAS Package code: PRSS0004AE-C (Package name: LDPAK (S)-(2) ) 4 D G 123 H7N0307LM S Rev.7.00 Apr 07, 2006 page 1 of 7 H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel to case thermal impedance Channel to ambient thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID (pulse) Note 1 IDR Pch Note 2 θ ch-c θ ch-a Tch Tstg Value 30 ±20 60 240 60 90 1.39 89 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C/W °C/W °C °C Electrical Characteristics Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Tota...