H7N0307LM

H7N0307LD, H7N0307LS, H7N0307LM Silicon N Channel MOS FET High Speed Power Switching ADE-208-1516D (Z) 5th. Edition May 2002 Features Low on-resistance RDS(on) =4.6 mΩ typ. Low drive current 4.5 V gate drive device can be driven from 5 V source Outline LDPAK D G S 4 44 1 2 3 1 2 3 H7N0307LS 1 2 3 H7N0307LM H7N0307LD 1. Gate 2. Drain 3. Source 4. Drain H7N0307LD, H7N0307LS, H7N0307LM Absolute Maximum Ratings (Ta = 25°C) Item Symbol Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation V DSS V GSS ID I Note 1 D(pulse) I DR Pch Note 2 Channel to Case Thermal Impedance θch-c Channel to Ambient Thermal Impedance θch-a Channel temperature Tch Storage temperature Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Ratings 30 ±20 60 240 60 90 1.39 89 150 –55 to +150 Unit V V A A A W °C/W °C/W °C °C Rev.4, May 2002, page 2 of 11 H7N0307LD, H7N0307LS, H7N0307LM Electrical Characteristics (Ta = 25°C) Item Symbol Min Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance V(BR)DSS V(BR)GSS I GSS I DSS VGS(off) RDS(on) 30 ±20 — — 1.0 — — Forward transfer admittance Input capacitance |yfs| Ciss 40 — Output capacitance Coss — Reverse transfer capacitance Crss — Total gate charge Qg — Gate to source...