N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
SST2630
3.8A , 100V , RDS(ON) 130 mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Produ...
Description
Elektronische Bauelemente
SST2630
3.8A , 100V , RDS(ON) 130 mΩ N-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
The SST2630 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness.
The SOT-26 package is universally used for all commercialindustrial surface mount applications.
FEATURES
Low on-resistance Capable of 2.5V gate drive Low drive current
MARKING
2630
= Date Code
SOT-26
A E
L
B
F CH DG K J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80
1.30 MAX. 1.90 REF. 0.30 0.50
REF.
G H J K L
Millimeter Min. Max.
0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF.
PACKAGE INFORMATION
Package
MPQ
SOT-26
3K
Leader Size 7 inch
DD DD GS
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current, VGS=4.5V 3 Pulsed Drain Current 1
TA=25°C TA=70°C
ID IDM
Power Dissipation
TA=25°C
PD
Linear Derating Factor
Operating Junction and Storage Temperature Range
TJ, Tstg
Thermal Resistance Rating
Maximum Junction to Ambient 3
RθJA
Ratings 100 ±20 3.8 3 14 2 0.016
-55~150
62.5
Unit V V
A
A W W / °C °C
°C / W
http://www.SeCoSGmbH.com/
11-Jul-2014 Rev. A
Any changes of specification will not be informed individually.
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Elektronische Bauelemente
SST2630
3.8A , 100V , RDS(ON) 130 mΩ N-Ch Enhancement Mode Power MOSFET
ELECTRICAL CHARACTERISTICS (TJ =25°C unless othe...
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