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SST2630

SeCoS

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente SST2630 3.8A , 100V , RDS(ON) 130 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Produ...


SeCoS

SST2630

File Download Download SST2630 Datasheet


Description
Elektronische Bauelemente SST2630 3.8A , 100V , RDS(ON) 130 mΩ N-Ch Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SST2630 provide the designer with best combination of fast switching, low on-resistance and cost-effectiveness. The SOT-26 package is universally used for all commercialindustrial surface mount applications. FEATURES Low on-resistance Capable of 2.5V gate drive Low drive current MARKING 2630 = Date Code SOT-26 A E L B F CH DG K J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.30 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. PACKAGE INFORMATION Package MPQ SOT-26 3K Leader Size 7 inch DD DD GS ABSOLUTE MAXIMUM RATINGS Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current, VGS=4.5V 3 Pulsed Drain Current 1 TA=25°C TA=70°C ID IDM Power Dissipation TA=25°C PD Linear Derating Factor Operating Junction and Storage Temperature Range TJ, Tstg Thermal Resistance Rating Maximum Junction to Ambient 3 RθJA Ratings 100 ±20 3.8 3 14 2 0.016 -55~150 62.5 Unit V V A A W W / °C °C °C / W http://www.SeCoSGmbH.com/ 11-Jul-2014 Rev. A Any changes of specification will not be informed individually. Page 1 of 2 Elektronische Bauelemente SST2630 3.8A , 100V , RDS(ON) 130 mΩ N-Ch Enhancement Mode Power MOSFET ELECTRICAL CHARACTERISTICS (TJ =25°C unless othe...




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