SSY5829P

Elektronische Bauelemente SSY5829P -2.5 A, -20 V, RDS(ON) 0.110  P-Channel Enhancement MOSFET With Schottky Diode RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers,PCMCIA cards, cellular and cordless telephones. 1206-8CF FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe 1206-8CF saves board space.  Fast switching speed.  High performance trench technology. PACKAGE INFORMATION Package MPQ 1206-8CF 3K LeaderSize 7’ inch REF. A B C D E F Millimeter Min. 2.00 3.00 3.00 0.65 Max. 2.10 3.05 3.05 0.70 1.95 2.00 0.70 0.90 REF. M a b L L1 Millimeter Min. 0.08 1.70 0.24 0.20 Max. 0.25 1.73 0.35 0.40 0 0.1     CCD D MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current(TJ=150°C )(MOSFET) 1 TA=25°C TA=70°C Pulsed Drain Current (MOSFET) 2 Continuous Source Current (MOSFET Diode Conduction) 1 Average Forward Current (Schottky) Pulse Forward Current (Schottky) Maximum Power Dissipation (MOSFET)1 TA=25°C TA=70°C Maximum Power Dissipation ...