STB1277

Elektronische Bauelemente STB1277 -2A , -30V PNP Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Switching and Amplification. High Total Power Dissipation. High hFE and Good Linearity TO-92 CLASSIFICATION OF hFE Product-Rank STB1277-O Range 100~200 STB1277-Y 160~320 3 Base Collector 2 1Emitter 2Collector 3Base 1 Emitter REF. A B C D E Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 - 3.30 3.81 0.36 0.56 REF. F G H J K Millimeter Min. Max. 0.30 0.51 1.27 TYP. 1.10 1.40 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage VCBO -30 Collector to Emitter Voltage VCEO -30 Emitter to Base Voltage VEBO -5 Collector Current - Continuous IC -2 Collector Power Dissipation PC 0.625 Junction, Storage Temperature TJ, TSTG 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test condition Collector to Base Breakdown Voltage V(BR)CBO -30 - - V IC= -0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -1mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 µA VCB= -30V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 µA VEB= -5V, IC=0 DC Current Gain hFE 100 - 320 VCE= -2V, IC= -500mA Collector to Emitter Saturat...