STT3524C

Elektronische Bauelemente STT3524C N-Ch: 4.1 A, 20 V, RDS(ON) 47 mΩ P-Ch: -3.2 A, -20 V, RDS(ON) 79 mΩ N & P-Channel Enhancement Mode Mos.FET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize high cell density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are DC-DC converters, power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES Low RDS(on) Provides Higher Efficiency And Extends Battery Life. Miniature TSOP-6 Surface Mount Package Saves Board Space. PACKAGE INFORMATION Package MPQ TSOP-6 3K Leader Size 7’ inch TSOP-6 A E L 654 B 123 F DG K C H J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.40 1.80 1.10 MAX. 1.90 REF. 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0 0.10 0.60 REF. 0.12 REF. 0° 10° 0.95 REF. Top View ABSOLUTE MAXIMUM RATINGS(TA=25℃ UNLESS OTHERWISE NOTED) Parameter Symbol Ratings N-Channel P-Channel Unit Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current 1 TA=25°C TA=70°C Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 TA=25°C TA=70°C 4.1 -3.2 ID A 3.3 -2.6 IDM 8 -8 A IS 1.05 -1.05 A 1.15 PD W 0.7 Operating Junction and Storage Temperature Range TJ, T...