TSM2307CX

TSM2307CX 30V P-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value VDS RDS(on) (max) VGS = -10V VGS = -4.5V -30 95 140 Qg 10 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Application ● Load Switch ● PA Switch Ordering Information Part No. TSM2307CX RF TSM2307CX RFG Package SOT-23 SOT-23 Packing 3kpcs / 7” Reel 3kpcs / 7” Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Absolute Maximum Ratings (TC = 25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) Continuous Source Current (Diode Conduction) Power Dissipation Ta = 25℃ Ta = 75℃ Operating Junction Temperature Storage Temperature Range VDS VGS ID IDM IS PD TJ TSTG Block Diagram P-Channel MOSFET Limit -30 ±20 -3 -20 -1.7 1.25 0.8 +150 -50 to +150 Unit V V A A A W ℃ ℃ 1/6 Version: C14 TSM2307CX 30V P-Channel MOSFET Thermal Performance Parameter Symbol Limit Unit Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient RӨJC RӨJA Electrical Specifications (TC = 25℃ unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Gate Threshold Voltage VGS = 0V, ID = -250µA ...