TSM2314

TSM2314 20V N-Channel MOSFET SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS (V) RDS(on)(mΩ) 33 @ VGS = 4.5V 20 40 @ VGS = 2.5V 100 @ VGS = 1.8V Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Block Diagram Application ● Load Switch ● PA Switch Ordering Information ID (A) 4.9 4.4 2.9 Part No. Package Packing TSM2314CX RF SOT-23 3Kpcs / 7” Reel TSM2314CX RFG SOT-23 3Kpcs / 7” Reel Note: “G” denotes Halogen Free Product. N-Channel MOSFET Absolute Maximum Rating (Ta = 25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @4.5V. Pulsed Drain Current, VGS @4.5V Continuous Source Current (Diode Conduction)a,b Maximum Power Dissipation Ta = 25oC Ta = 75oC VDS VGS ID IDM IS PD Operating Junction Temperature Operating Junction and Storage Temperature Range TJ TJ, TSTG Thermal Performance Parameter Symbol Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Notes: a. Pulse width limited by the Maximum junction temperature b. Surface Mounted on FR4 Board, t ≤ 5 sec. RӨJF RӨJA Limit 20 ±12 4.9 15 1.0 1.25 0.8 +150 -55 to +150 Limit 75 120 Unit V V A A A W oC oC Unit oC/W oC/W 1/6 Version: D12 TSM2314 20V N-Channel MOSFET Electrical Specifications (Ta = 25oC unless otherwise noted) Parameter Conditions Symbol Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gat...