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TSM9933DCS Dataheets PDF



Part Number TSM9933DCS
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description -20V P-Channel Power MOSFET
Datasheet TSM9933DCS DatasheetTSM9933DCS Datasheet (PDF)

TSM9933DCS -20V P-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 Key Parameter Performance Parameter Value VDS VGS = -4.5V -20 60 RDS(on) (max) VGS = -2.7V VGS = -2.5V 78 85 Qg 6 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Ordering Information Part No. Package Packing TSM9933DCS RL SOP-8 2.5kps / 13’’ Reel TSM9933DCS R.

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TSM9933DCS -20V P-Channel Power MOSFET SOP-8 Pin Definition: 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 3. Source 2 6. Drain 2 4. Gate 2 5. Drain 2 Key Parameter Performance Parameter Value VDS VGS = -4.5V -20 60 RDS(on) (max) VGS = -2.7V VGS = -2.5V 78 85 Qg 6 Unit V mΩ nC Features ● Advance Trench Process Technology ● High Density Cell Design for Ultra Low On-resistance Ordering Information Part No. Package Packing TSM9933DCS RL SOP-8 2.5kps / 13’’ Reel TSM9933DCS RLG SOP-8 2.5kps / 13’’ Reel Note: “G” denotes for Halogen- and Antimony-free as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds Block Diagram Dual P-Channel MOSFET Absolute Maximum Ratings (TA=25oC unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V. Pulsed Drain Current, VGS @ 4.5V Continuous Source Current (Diode Conduction) (Note 1,2) Maximum Power Dissipation TA=25oC TA=70oC Operating Junction Temperature Operating Junction and Storage Temperature Range VDS VGS ID IDM IS PD TJ TJ, TSTG Thermal Performance Parameter Junction to Case Thermal Resistance Junction to Ambient Thermal Resistance (PCB mounted) Symbol RӨJC RӨJA Limit -20 ±12 -4.7 -20 -2.5 2 1.3 +150 - 55 to +150 Limit 30 62.5 Unit V V A A A W oC oC Unit oC/W oC/W 1/6 Version: D14 TSM9933DCS -20V P-Channel Power MOSFET Electrical Specifications (TJ=25oC unless otherwise noted) Parameter Conditions Symbol Static (Note 3) Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Body Leakage Zero Gate Voltage Drain Current On-State Drain Current Drain-Source On-State Resistance VGS = 0V, ID = -250µA VDS = VGS, ID = -250µA VGS = ±12V, VDS = 0V VDS = -20V, VGS = 0V VDS =-5V, VGS = -4.5V VGS = -4.5V, ID = -4.7A VGS = -4.5V, ID = -2.9A VGS = -2.7V, ID = -1.5A BVDSS VGS(TH) IGSS IDSS ID(ON) RDS(ON) Forward Transconductance Diode Forward Voltage Dynamic (Note 4,5) VGS = -2.5V, ID = -3.8A VDS = -10V, ID = -4.7A IS = -1.7A, VGS = 0V gfs VSD Total Gate Charge Gate-Source Charge Gate-Drain Charge Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching (Note 4,5) VDS = -10V, ID = -4.7A, VGS = -4.5V VDS = -10V, VGS = 0V, f = 1.0MHz Qg Qgs Qgd Ciss Coss Crss Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time VDD = -10V, RL = 10Ω, ID = -1A, VGEN = -4.5V, RG = 6Ω td(on) tr td(off) tf Notes: 1. Pulse width limited by the Maximum junction temperature 2. Surface Mounted on FR4 Board, t ≤ 5 sec. 3. pulse test: PW ≤300µs, duty cycle ≤2% 4. For DESIGN AID ONLY, not subject to production testing. 5. Switching time is essentially independent of operating temperature. Min -20 -0.6 ---15 ------- ------- ----- Typ -----48 47 60 65 11 -0.8 6 1.4 1.9 640 180 90 22 35 45 25 Max Unit --1.4 ±100 -1.0 -60 58 78 85 --1.2 V V nA µA A mΩ S V 9 -- nC ---- pF -- 35 55 ns 70 50 2/6 Version: D14 Electrical Characteristics Curves Output Characteristics TSM9933DCS -20V P-Channel Power MOSFET Transfer Characteristics On-Resistance vs. Drain Current Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 3/6 Version: D14 Electrical Characteristics Curves On-Resistance vs. Gate-Source Voltage TSM9933DCS -20V P-Channel Power MOSFET Threshold Voltage Single Pulse Power Normalized Thermal Transient Impedance, Junction-to-Ambient 4/6 Version: D14 TSM9933DCS -20V P-Channel Power MOSFET SOP-8 Mechanical Drawing Unit: Millimeters Marking Diagram Y = Year Code M = Month Code (A=Jan, B=Feb, C=Mar, D=Apl, E=May, F=Jun, G=Jul, H=Aug, I=Sep, J=Oct, K=Nov, L=Dec) = Month Code for Halogen Free Product (O=Jan, P=Feb, Q=Mar, R=Apl, S=May, T=Jun, U=Jul, V=Aug, W=Sep, X=Oct, Y=Nov, Z=Dec) L = Lot Code 5/6 Version: D14 TSM9933DCS -20V P-Channel Power MOSFET Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 6/6 Version: D14 .


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