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V10D100C-M3, V10D100CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rec...
www.vishay.com
V10D100C-M3, V10D100CHM3
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier
Schottky Rectifier
Ultra Low VF = 0.48 V at IF = 2.5 A
TMBS ® eSMP® Series
TO-263AC (SMPD)
K
1
2 Top View
Bottom View
V10D100C
PIN 1
K
PIN 2
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
100 V
IFSM VF at IF = 5.0 A (TA = 125 °C)
TJ max.
100 A 0.60 V 150 °C
Package
TO-263AC (SMPD)
Diode variations
Dual common cathode
FEATURES Trench MOS
Schottky technology generation 2 Very low profile - typical height of 1.7 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3 Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application.
MECHANICAL DATA Case: TO-263AC (SMPD) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: As marked
MAXIMUM RATINGS (TA = 25 °C unless otherwis...