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V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier Schot...
www.vishay.com
V10D120C-M3, V10D120CHM3
Vishay General Semiconductor
Dual High-Voltage TMBS® (Trench MOS Barrier
Schottky) Rectifier
Ultra Low VF = 0.53 V at IF = 2.5 A
eSMP® Series SMPD (TO-263AC)
K
1
2 Top View
Bottom View
V10D120C
Anode 1
K
Anode 2
Cathode
DESIGN SUPPORT TOOLS AVAILABLE
3D 3D
3D Models
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 5.0 A (TA = 125 °C) TJ max. Package
2 x 5.0 A 120 V 100 A 0.64 V 150 °C
SMPD (TO-263AC)
Circuit configuration
Common cathode
FEATURES Trench MOS
Schottky technology Very low profile - typical height of 1.7 mm Ideal for automated placement Low forward voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C AEC-Q101 qualified available:
- Automotive ordering code: base P/NHM3 Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in high frequency DC/DC converters, switching power supplies, freewheeling diodes, OR-ing diode, and reverse battery protection in commercial, inductrial, and automotive application.
MECHANICAL DATA Case: SMPD (TO-263AC) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 and HM3 suffix meets JESD 201 class 2 whisker test Polarity: as marked
MAXIMUM RA...