1N5817

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 1N5817/D Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes. Extremely Low vF Low Stored Charge, Majority Carrier Conduction Low Power Loss/High Efficiency Mechanical Characteristics Case: Epoxy, Molded Weight: 0.4 gram (approximately) Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 1000 per bag. Available Tape and Reeled, 5000 per reel, by adding a “RL” suffix to the part number Polarity: Cathode Indicated by Polarity Band Marking: 1N5817, 1N5818, 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Non–Repetitive Peak Reverse Voltage RMS Reverse Voltage Average Rectified Forward Current (2) (VR(equiv) ≤ 0.2 VR(dc), TL = 90°C, RθJA = 80°C/W, P.C. Board Mounting, see Note 2, TA = 55°C) Ambient Temperature (Rated VR(dc), PF(AV) = 0, RθJA = 80°C/W) Non–Repetitive Peak Surge Current (Surge applied at rated load conditions, half–wave, single phase ...